AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping

The characteristics of AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with polarization-doped p-type layers were numerically analyzed. The energy band diagrams, carrier distributions in the multiple quantum wells (MQWs) and the p-type regions, electroluminescence spectra, current-ve...

وصف كامل

التفاصيل البيبلوغرافية
الحاوية / القاعدة:IEEE Photonics Journal
المؤلفون الرئيسيون: Jianjun Chang, Dunjun Chen, Junjun Xue, Kexiu Dong, Bin Liu, Hai Lu, Rong Zhang, Youdou Zheng
التنسيق: مقال
اللغة:الإنجليزية
منشور في: IEEE 2016-01-01
الموضوعات:
Deep ultraviolet (DUV) light-emitting diode (LED)
multiple quantum well
last quantum barrier
polarization doping
الوصول للمادة أونلاين:https://ieeexplore.ieee.org/document/7386792/

الانترنت

https://ieeexplore.ieee.org/document/7386792/

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