Topological states in honeycomb arrays of implanted acceptors in semiconductors

We study a neutral honeycomb array of acceptors in a Group IV semiconductor. Tight-binding exhibits a band gap from different hopping of angular momentum $\pm\frac32$ and $\pm\frac12$ , forming a topological insulator (TI). The hopping is even under separate reversal of spatial and spin motions, unl...

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Bibliographic Details
Published in:New Journal of Physics
Main Authors: Jianhua Zhu, Sankalan Bhattacharyya, Wei Wu, Andrew J Fisher
Format: Article
Language:English
Published: IOP Publishing 2024-01-01
Subjects:
topological insulators
acceptors in semiconductors
deterministic doping
Online Access:https://doi.org/10.1088/1367-2630/ad2cc4
Description
Summary:We study a neutral honeycomb array of acceptors in a Group IV semiconductor. Tight-binding exhibits a band gap from different hopping of angular momentum $\pm\frac32$ and $\pm\frac12$ , forming a topological insulator (TI). The hopping is even under separate reversal of spatial and spin motions, unlike spin–orbit coupling. The TI is robust to Coulomb interactions and realistic electronic structure calculations show it survives for a range of spacings and distortions commensurate with the silicon growth surface, but has an instability towards spin density wave formation at large separations.
ISSN:1367-2630

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