Plotting philosophy picture of uniaxial magnetic anisotropy in arsenide and phosphide dilute ferromagnetic semiconductors
In this work, we performed a systematic investigation on the comparison of magnetic anisotropy between three III-Mn-V dilute ferromagnetic semiconductors (Ga,Mn)As, (In,Mn)As and (Ga,Mn)P prepared by ion implantation and pulsed laser melting. Compressive strain induces in-plane magnetic anisotropy i...
| 發表在: | Results in Physics |
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| Main Authors: | , , , , , , , , |
| 格式: | Article |
| 語言: | 英语 |
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Elsevier
2024-05-01
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| 主題: | |
| 在線閱讀: | http://www.sciencedirect.com/science/article/pii/S221137972400370X |
| _version_ | 1850071370340237312 |
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| author | Mingyang Tian Tingting Wang Yarong Su Jianqi Zhu Ke Liu Mingjun Tang Zhengwei Xie Ye Yuan Mao Wang |
| author_facet | Mingyang Tian Tingting Wang Yarong Su Jianqi Zhu Ke Liu Mingjun Tang Zhengwei Xie Ye Yuan Mao Wang |
| author_sort | Mingyang Tian |
| collection | DOAJ |
| container_title | Results in Physics |
| description | In this work, we performed a systematic investigation on the comparison of magnetic anisotropy between three III-Mn-V dilute ferromagnetic semiconductors (Ga,Mn)As, (In,Mn)As and (Ga,Mn)P prepared by ion implantation and pulsed laser melting. Compressive strain induces in-plane magnetic anisotropy in (Ga,Mn)As and (Ga,Mn)P, while out-of-plane magnetic anisotropy is present in (In,Mn)As due to tensile strain introduced by Mn substitution. Interestingly, all materials prepared herein does not present strong in-plane uniaxial anisotropy, between [110] and [11¯0] directions, which always exhibits in low temperature molecular beam epitaxy (LT-MBE) grown (Ga,Mn)As samples. The reason is ascribed to the fact that the ultra-fast recrystallization induced by pulsed laser melting weakens the formation of Mn-Mn dimers along the [11¯0] direction which presents in LT-MBE grown (Ga,Mn)As. |
| format | Article |
| id | doaj-art-40afd9b2d8a446ddbac4ddd65edf096c |
| institution | Directory of Open Access Journals |
| issn | 2211-3797 |
| language | English |
| publishDate | 2024-05-01 |
| publisher | Elsevier |
| record_format | Article |
| spelling | doaj-art-40afd9b2d8a446ddbac4ddd65edf096c2025-08-20T00:17:11ZengElsevierResults in Physics2211-37972024-05-016010768710.1016/j.rinp.2024.107687Plotting philosophy picture of uniaxial magnetic anisotropy in arsenide and phosphide dilute ferromagnetic semiconductorsMingyang Tian0Tingting Wang1Yarong Su2Jianqi Zhu3Ke Liu4Mingjun Tang5Zhengwei Xie6Ye Yuan7Mao Wang8Laboratory of Micro-Nano Optics, College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, People's Republic of China; Tianfu Xinglong Lake Laboratory, Chengdu 610213, People's Republic of ChinaLaboratory of Micro-Nano Optics, College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, People's Republic of ChinaLaboratory of Micro-Nano Optics, College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, People's Republic of ChinaLaboratory of Micro-Nano Optics, College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, People's Republic of ChinaLaboratory of Micro-Nano Optics, College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, People's Republic of ChinaLaboratory of Micro-Nano Optics, College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, People's Republic of ChinaLaboratory of Micro-Nano Optics, College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, People's Republic of ChinaSongshan Lake Materials Laboratory, Dongguan 523808, People's Republic of ChinaLaboratory of Micro-Nano Optics, College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, People's Republic of China; Corresponding author.In this work, we performed a systematic investigation on the comparison of magnetic anisotropy between three III-Mn-V dilute ferromagnetic semiconductors (Ga,Mn)As, (In,Mn)As and (Ga,Mn)P prepared by ion implantation and pulsed laser melting. Compressive strain induces in-plane magnetic anisotropy in (Ga,Mn)As and (Ga,Mn)P, while out-of-plane magnetic anisotropy is present in (In,Mn)As due to tensile strain introduced by Mn substitution. Interestingly, all materials prepared herein does not present strong in-plane uniaxial anisotropy, between [110] and [11¯0] directions, which always exhibits in low temperature molecular beam epitaxy (LT-MBE) grown (Ga,Mn)As samples. The reason is ascribed to the fact that the ultra-fast recrystallization induced by pulsed laser melting weakens the formation of Mn-Mn dimers along the [11¯0] direction which presents in LT-MBE grown (Ga,Mn)As.http://www.sciencedirect.com/science/article/pii/S221137972400370XMagnetic anisotropyDilute ferromagnetic semiconductorsIon implantationPulsed laser annealing |
| spellingShingle | Mingyang Tian Tingting Wang Yarong Su Jianqi Zhu Ke Liu Mingjun Tang Zhengwei Xie Ye Yuan Mao Wang Plotting philosophy picture of uniaxial magnetic anisotropy in arsenide and phosphide dilute ferromagnetic semiconductors Magnetic anisotropy Dilute ferromagnetic semiconductors Ion implantation Pulsed laser annealing |
| title | Plotting philosophy picture of uniaxial magnetic anisotropy in arsenide and phosphide dilute ferromagnetic semiconductors |
| title_full | Plotting philosophy picture of uniaxial magnetic anisotropy in arsenide and phosphide dilute ferromagnetic semiconductors |
| title_fullStr | Plotting philosophy picture of uniaxial magnetic anisotropy in arsenide and phosphide dilute ferromagnetic semiconductors |
| title_full_unstemmed | Plotting philosophy picture of uniaxial magnetic anisotropy in arsenide and phosphide dilute ferromagnetic semiconductors |
| title_short | Plotting philosophy picture of uniaxial magnetic anisotropy in arsenide and phosphide dilute ferromagnetic semiconductors |
| title_sort | plotting philosophy picture of uniaxial magnetic anisotropy in arsenide and phosphide dilute ferromagnetic semiconductors |
| topic | Magnetic anisotropy Dilute ferromagnetic semiconductors Ion implantation Pulsed laser annealing |
| url | http://www.sciencedirect.com/science/article/pii/S221137972400370X |
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