APA (7th ed.) Citation

Park, J., Jang, Y., Lee, J., An, S., Mok, J., & Lee, S. (2023, June). Synaptic Transistor Based on In‐Ga‐Zn‐O Channel and Trap Layers with Highly Linear Conductance Modulation for Neuromorphic Computing. Advanced Electronic Materials.

Chicago Style (17th ed.) Citation

Park, Junhyeong, Yuseong Jang, Jinkyu Lee, Soobin An, Jinsung Mok, and Soo‐Yeon Lee. "Synaptic Transistor Based on In‐Ga‐Zn‐O Channel and Trap Layers with Highly Linear Conductance Modulation for Neuromorphic Computing." Advanced Electronic Materials Jun. 2023.

MLA (9th ed.) Citation

Park, Junhyeong, et al. "Synaptic Transistor Based on In‐Ga‐Zn‐O Channel and Trap Layers with Highly Linear Conductance Modulation for Neuromorphic Computing." Advanced Electronic Materials, Jun. 2023.