Effect of grain size on ferroelectric and dielectric properties of thin films prepared by rf-magnetron sputtering

[Formula: see text][Formula: see text]Ti3[Formula: see text](BLT) thin films are promising materials used in non-volatile memories. In this work, BLT films were deposited on Pt(111)/Ti/SiO2/Si substrates by rf-magnetron sputtering method followed by annealing treatments. The microstructures of BLT t...

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Bibliographic Details
Published in:Journal of Advanced Dielectrics
Main Authors: Shuai Ma, Wei Li, Jigong Hao, Yuying Chen, Zhijun Xu
Format: Article
Language:English
Published: World Scientific Publishing 2023-10-01
Subjects:
Thin films
rf-magnetron sputtering
ferroelectric properties
dielectric properties
Online Access:https://www.worldscientific.com/doi/10.1142/S2010135X23500170
Description
Summary:[Formula: see text][Formula: see text]Ti3[Formula: see text](BLT) thin films are promising materials used in non-volatile memories. In this work, BLT films were deposited on Pt(111)/Ti/SiO2/Si substrates by rf-magnetron sputtering method followed by annealing treatments. The microstructures of BLT thin films were investigated via X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). With the increase in annealing temperature, the grain size increased significantly and the preferred crystalline orientation changed. A well-saturated hysteresis loop with a superior remnant polarization of 15.4 [Formula: see text]C/cm2 was obtained for BLT thin films annealed at 700∘C. The results show that the dielectric constant decreased with the increase in grain sizes.
ISSN:2010-135X
2010-1368

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