Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays

Abstract The technologies of 3D vertical architecture have made a major breakthrough in establishing high‐density memory structures. Combined with an array structure, a 3D high‐density vertical resistive random access memory (VRRAM) cross‐point array is demonstrated to efficiently increase the devic...

詳細記述

書誌詳細
出版年:Advanced Science
主要な著者: Min‐Ci Wu, Yi‐Hsin Ting, Jui‐Yuan Chen, Wen‐Wei Wu
フォーマット: 論文
言語:英語
出版事項: Wiley 2019-12-01
主題:
オンライン・アクセス:https://doi.org/10.1002/advs.201902363

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