Continuous Si doping in (010) and (001) β-Ga2O3 films by plasma-assisted molecular beam epitaxy

We report the continuous Si doping in β-Ga2O3 epitaxial films grown by plasma-assisted molecular beam epitaxy through the use of a valved effusion cell for the Si source. Secondary ion mass spectroscopy results exhibit that the Si doping profiles in β-Ga2O3 are flat and have sharp turn-on/off depth...

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Bibliographic Details
Published in:	APL Materials
Main Authors:	Takeki Itoh, Akhil Mauze, Yuewei Zhang, James S. Speck
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2023-04-01
Online Access:	http://dx.doi.org/10.1063/5.0130654

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