III-nitride memristors: materials, devices, and applications

Memristors, with their compactness, nonvolatile storage, and dynamic resistance modulation, are poised to revolutionize next-generation memory and neuromorphic computing paradigms. III-nitride materials, such as boron nitride (BN), gallium nitride (GaN), and aluminum nitride (AlN), exhibit exception...

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Bibliographic Details
Published in:Materials Futures
Main Authors: Yang Yang, Haotian Li, Qilin Hua
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Subjects:
Online Access:https://doi.org/10.1088/2752-5724/ade5be

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