Red light-emitting diode with full InGaN structure on a ScAlMgO4 substrate

• 出版年: Applied Physics Express
• 主要な著者: Mohammed A. Najmi, Rawan S. Jalmood, Ivan Kotov, Cesur Altinkaya, Wakana Takeuchi, Daisuke Iida, Kazuhiro Ohkawa
• フォーマット: 論文
• 言語: 英語
• 出版事項: IOP Publishing 2024-01-01
• 主題: InGaN; ScAlMgO4; LEDs; MOVPE
• オンライン･アクセス: https://doi.org/10.35848/1882-0786/ad8f0e
• ISSN: 1882-0786

Here, we report the first demonstration of a full InGaN-based red LED grown on a c -plane ScAlMgO _4 substrate. This work represents a potential approach for achieving red emissions from an InGaN quantum well grown on InGaN underlying layers. The LED device exhibits a peak wavelength of 617 nm at a current injection of 40 mA (10.5 A cm ^−2 ). The light output power and external quantum efficiency were 12.6 μ W and 0.016% at 40 mA (10.5 A cm ^−2 ), respectively. These results are expected to contribute to the development of longer-wavelength emission LEDs and laser diodes.