Robust Simulation of a TaO Memristor Model

This work presents a continuous and differentiable approximation of a Tantalum oxide memristor model which is suited for robust numerical simulations in software. The original model was recently developed at Hewlett Packard labs on the basis of experiments carried out on a memristor manufactured in...

وصف كامل

التفاصيل البيبلوغرافية
الحاوية / القاعدة:	Radioengineering
المؤلفون الرئيسيون:	A. Ascoli, R. Tetzlaff, L. Chua
التنسيق:	مقال
اللغة:	الإنجليزية
منشور في:	Spolecnost pro radioelektronicke inzenyrstvi 2015-06-01
الموضوعات:	TaO memristor modeling numerical techniques circuit implementation
الوصول للمادة أونلاين:	http://www.radioeng.cz/fulltexts/2015/15_02_0384_0392.pdf

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