Beyond the Silicon Plateau: A Convergence of Novel Materials for Transistor Evolution

Highlights This review introduces promising semiconductor materials for future transistors, including two-dimensional van der Waals materials, Mott insulators, halide perovskites, and amorphous oxides, with advantages such as clean interfaces, ultra-thin channels, and defect tolerance. These materia...

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Bibliographic Details
Published in:Nano-Micro Letters
Main Authors: Jung Hun Lee, Jae Young Kim, Hyeon-Ji Lee, Sung-Jin Choi, Yoon Jung Lee, Ho Won Jang
Format: Article
Language:English
Published: SpringerOpen 2025-09-01
Subjects:
Modern transistors
Transistor scaling
Alternative semiconductors
3D integration
Device reliability
Online Access:https://doi.org/10.1007/s40820-025-01898-8
Description
Summary:Highlights This review introduces promising semiconductor materials for future transistors, including two-dimensional van der Waals materials, Mott insulators, halide perovskites, and amorphous oxides, with advantages such as clean interfaces, ultra-thin channels, and defect tolerance. These materials, when combined with advanced gate dielectrics and next-generation interconnects, offer synergistic solutions to scaling challenges such as carrier scattering, oxide thickness limitations, and interface degradation. The review also discusses reliability concerns including thermal instability and leakage current, and explores future applications in artificial intelligence hardware, in-memory computing, and three-dimensional integration.
ISSN:2311-6706
2150-5551

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