Grain engineering for efficient near-infrared perovskite light-emitting diodes
Abstract Metal halide perovskites show promise for next-generation light-emitting diodes, particularly in the near-infrared range, where they outperform organic and quantum-dot counterparts. However, they still fall short of costly III-V semiconductor devices, which achieve external quantum efficien...
| Published in: | Nature Communications |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2024-12-01
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| Online Access: | https://doi.org/10.1038/s41467-024-55075-3 |
| _version_ | 1849535195213987840 |
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| author | Sung-Doo Baek Wenhao Shao Weijie Feng Yuanhao Tang Yoon Ho Lee James Loy William B. Gunnarsson Hanjun Yang Yuchen Zhang M. Bilal Faheem Poojan Indrajeet Kaswekar Harindi R. Atapattu Jiajun Qin Aidan H. Coffey Jee Yung Park Seok Joo Yang Yu-Ting Yang Chenhui Zhu Kang Wang Kenneth R. Graham Feng Gao Quinn Qiao L. Jay Guo Barry P. Rand Letian Dou |
| author_facet | Sung-Doo Baek Wenhao Shao Weijie Feng Yuanhao Tang Yoon Ho Lee James Loy William B. Gunnarsson Hanjun Yang Yuchen Zhang M. Bilal Faheem Poojan Indrajeet Kaswekar Harindi R. Atapattu Jiajun Qin Aidan H. Coffey Jee Yung Park Seok Joo Yang Yu-Ting Yang Chenhui Zhu Kang Wang Kenneth R. Graham Feng Gao Quinn Qiao L. Jay Guo Barry P. Rand Letian Dou |
| author_sort | Sung-Doo Baek |
| collection | DOAJ |
| container_title | Nature Communications |
| description | Abstract Metal halide perovskites show promise for next-generation light-emitting diodes, particularly in the near-infrared range, where they outperform organic and quantum-dot counterparts. However, they still fall short of costly III-V semiconductor devices, which achieve external quantum efficiencies above 30% with high brightness. Among several factors, controlling grain growth and nanoscale morphology is crucial for further enhancing device performance. This study presents a grain engineering methodology that combines solvent engineering and heterostructure construction to improve light outcoupling efficiency and defect passivation. Solvent engineering enables precise control over grain size and distribution, increasing light outcoupling to ~40%. Constructing 2D/3D heterostructures with a conjugated cation reduces defect densities and accelerates radiative recombination. The resulting near-infrared perovskite light-emitting diodes achieve a peak external quantum efficiency of 31.4% and demonstrate a maximum brightness of 929 W sr−1 m−2. These findings indicate that perovskite light-emitting diodes have potential as cost-effective, high-performance near-infrared light sources for practical applications. |
| format | Article |
| id | doaj-art-81d17e2e0cfc44afa2b0b7e5bf2dfe9b |
| institution | Directory of Open Access Journals |
| issn | 2041-1723 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| spelling | doaj-art-81d17e2e0cfc44afa2b0b7e5bf2dfe9b2025-08-20T02:46:13ZengNature PortfolioNature Communications2041-17232024-12-0115111010.1038/s41467-024-55075-3Grain engineering for efficient near-infrared perovskite light-emitting diodesSung-Doo Baek0Wenhao Shao1Weijie Feng2Yuanhao Tang3Yoon Ho Lee4James Loy5William B. Gunnarsson6Hanjun Yang7Yuchen Zhang8M. Bilal Faheem9Poojan Indrajeet Kaswekar10Harindi R. Atapattu11Jiajun Qin12Aidan H. Coffey13Jee Yung Park14Seok Joo Yang15Yu-Ting Yang16Chenhui Zhu17Kang Wang18Kenneth R. Graham19Feng Gao20Quinn Qiao21L. Jay Guo22Barry P. Rand23Letian Dou24Davidson School of Chemical Engineering, Purdue UniversityDavidson School of Chemical Engineering, Purdue UniversityMacromolecular Science and Engineering, University of MichiganDavidson School of Chemical Engineering, Purdue UniversityDavidson School of Chemical Engineering, Purdue UniversityDepartment of Physics, Princeton UniversityDepartment of Electrical and Computer Engineering, Princeton UniversityDavidson School of Chemical Engineering, Purdue UniversityDepartment of Mechanical and Aerospace Engineering, Syracuse UniversityDepartment of Mechanical and Aerospace Engineering, Syracuse UniversityDepartment of Mechanical and Aerospace Engineering, Syracuse UniversityDepartment of Chemistry, University of KentuckyDepartment of Physics, Chemistry and Biology (IFM), Linköping UniversityAdvanced Light Source, Lawrence Berkeley National LaboratoryDavidson School of Chemical Engineering, Purdue UniversityDavidson School of Chemical Engineering, Purdue UniversityDavidson School of Chemical Engineering, Purdue UniversityAdvanced Light Source, Lawrence Berkeley National LaboratoryDavidson School of Chemical Engineering, Purdue UniversityDepartment of Chemistry, University of KentuckyDepartment of Physics, Chemistry and Biology (IFM), Linköping UniversityDepartment of Mechanical and Aerospace Engineering, Syracuse UniversityMacromolecular Science and Engineering, University of MichiganDepartment of Electrical and Computer Engineering, Princeton UniversityDavidson School of Chemical Engineering, Purdue UniversityAbstract Metal halide perovskites show promise for next-generation light-emitting diodes, particularly in the near-infrared range, where they outperform organic and quantum-dot counterparts. However, they still fall short of costly III-V semiconductor devices, which achieve external quantum efficiencies above 30% with high brightness. Among several factors, controlling grain growth and nanoscale morphology is crucial for further enhancing device performance. This study presents a grain engineering methodology that combines solvent engineering and heterostructure construction to improve light outcoupling efficiency and defect passivation. Solvent engineering enables precise control over grain size and distribution, increasing light outcoupling to ~40%. Constructing 2D/3D heterostructures with a conjugated cation reduces defect densities and accelerates radiative recombination. The resulting near-infrared perovskite light-emitting diodes achieve a peak external quantum efficiency of 31.4% and demonstrate a maximum brightness of 929 W sr−1 m−2. These findings indicate that perovskite light-emitting diodes have potential as cost-effective, high-performance near-infrared light sources for practical applications.https://doi.org/10.1038/s41467-024-55075-3 |
| spellingShingle | Sung-Doo Baek Wenhao Shao Weijie Feng Yuanhao Tang Yoon Ho Lee James Loy William B. Gunnarsson Hanjun Yang Yuchen Zhang M. Bilal Faheem Poojan Indrajeet Kaswekar Harindi R. Atapattu Jiajun Qin Aidan H. Coffey Jee Yung Park Seok Joo Yang Yu-Ting Yang Chenhui Zhu Kang Wang Kenneth R. Graham Feng Gao Quinn Qiao L. Jay Guo Barry P. Rand Letian Dou Grain engineering for efficient near-infrared perovskite light-emitting diodes |
| title | Grain engineering for efficient near-infrared perovskite light-emitting diodes |
| title_full | Grain engineering for efficient near-infrared perovskite light-emitting diodes |
| title_fullStr | Grain engineering for efficient near-infrared perovskite light-emitting diodes |
| title_full_unstemmed | Grain engineering for efficient near-infrared perovskite light-emitting diodes |
| title_short | Grain engineering for efficient near-infrared perovskite light-emitting diodes |
| title_sort | grain engineering for efficient near infrared perovskite light emitting diodes |
| url | https://doi.org/10.1038/s41467-024-55075-3 |
| work_keys_str_mv | AT sungdoobaek grainengineeringforefficientnearinfraredperovskitelightemittingdiodes AT wenhaoshao grainengineeringforefficientnearinfraredperovskitelightemittingdiodes AT weijiefeng grainengineeringforefficientnearinfraredperovskitelightemittingdiodes AT yuanhaotang grainengineeringforefficientnearinfraredperovskitelightemittingdiodes AT yoonholee grainengineeringforefficientnearinfraredperovskitelightemittingdiodes AT jamesloy grainengineeringforefficientnearinfraredperovskitelightemittingdiodes AT williambgunnarsson grainengineeringforefficientnearinfraredperovskitelightemittingdiodes AT hanjunyang grainengineeringforefficientnearinfraredperovskitelightemittingdiodes AT yuchenzhang grainengineeringforefficientnearinfraredperovskitelightemittingdiodes AT mbilalfaheem grainengineeringforefficientnearinfraredperovskitelightemittingdiodes AT poojanindrajeetkaswekar grainengineeringforefficientnearinfraredperovskitelightemittingdiodes AT harindiratapattu grainengineeringforefficientnearinfraredperovskitelightemittingdiodes AT jiajunqin grainengineeringforefficientnearinfraredperovskitelightemittingdiodes AT aidanhcoffey grainengineeringforefficientnearinfraredperovskitelightemittingdiodes AT jeeyungpark grainengineeringforefficientnearinfraredperovskitelightemittingdiodes AT seokjooyang grainengineeringforefficientnearinfraredperovskitelightemittingdiodes AT yutingyang grainengineeringforefficientnearinfraredperovskitelightemittingdiodes AT chenhuizhu grainengineeringforefficientnearinfraredperovskitelightemittingdiodes AT kangwang grainengineeringforefficientnearinfraredperovskitelightemittingdiodes AT kennethrgraham grainengineeringforefficientnearinfraredperovskitelightemittingdiodes AT fenggao grainengineeringforefficientnearinfraredperovskitelightemittingdiodes AT quinnqiao grainengineeringforefficientnearinfraredperovskitelightemittingdiodes AT ljayguo grainengineeringforefficientnearinfraredperovskitelightemittingdiodes AT barryprand grainengineeringforefficientnearinfraredperovskitelightemittingdiodes AT letiandou grainengineeringforefficientnearinfraredperovskitelightemittingdiodes |