Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM)

Due to the difficulties associated with scaling of silicon transistors, various technologies beyond binary logic processing are actively being investigated. Ternary logic circuit implementation with carbon nanotube field effect transistors (CNTFETs) and resistive random access memory (RRAM) integrat...

وصف كامل

التفاصيل البيبلوغرافية
الحاوية / القاعدة:	Micromachines
المؤلفون الرئيسيون:	Furqan Zahoor, Fawnizu Azmadi Hussin, Farooq Ahmad Khanday, Mohamad Radzi Ahmad, Illani Mohd Nawi
التنسيق:	مقال
اللغة:	الإنجليزية
منشور في:	MDPI AG 2021-10-01
الموضوعات:	multiple valued logic (MVL) resistive random access memory (RRAM) carbon nanotube field effect transistor (CNTFET) ternary logic systems emerging technologies innovation
الوصول للمادة أونلاين:	https://www.mdpi.com/2072-666X/12/11/1288

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