Research on Application Reliability of IGBT Device in Non-standard Operating Conditions

• 出版年: Kongzhi Yu Xinxi Jishu
• 主要な著者: LIU Wenye, LI Yanyong, YANG Jinfeng, WANG Hongfeng, WANG Liping
• フォーマット: 論文
• 言語: 中国語
• 出版事項: Editorial Office of Control and Information Technology 2016-01-01
• 主題: IGBT; failure rate; wearing out model; curve fitting; lifetime
• オンライン･アクセス: http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.02.001
• ISSN: 2096-5427

As for DC link voltage is up to 2 kV, both 3.3 kV and 4.5 kV IGBTs can meet the requirements of real engineering application. For 3.3 kV power devices, normal DC link voltage is configured with the range of 1 500~1 800 V, impacts on the reliability of 3.3 kV devices brought by high level DC link voltage need further evaluated. From the points of failure rate and lifetime, application reliability comparison study on two types of IGBTs was done with the same main circuit, operating conditions and application requirements. These conclusions can provides reference for device selection in system design, and the methods show meaningful guideline in real application.