Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots

We report low-temperature photoluminescence measurements on highly-uniform GaAs/AlxGa1−xAs quantum dots grown by droplet epitaxy. Recombination between confined electrons and holes bound to carbon acceptors in the dots allow us to determine the energies of the confined states in the system, as confi...

書目詳細資料
發表在:	AIP Advances
Main Authors:	Y. C. Chang, A. J. Robson, S. Harrison, Q. D. Zhuang, M. Hayne
格式:	Article
語言:	英语
出版:	AIP Publishing LLC 2015-06-01
在線閱讀:	http://dx.doi.org/10.1063/1.4922950

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