Miniature Switchable Millimeter-Wave BiCMOS Low-Noise Amplifier at 120/140 GHz Using an HBT Switch

A 120−140 GHz frequency-switchable, very compact low-noise amplifier (LNA) fabricated in a 0.13 µm SiGe:C BiCMOS technology is proposed. A single radio-frequency (RF) switch composed of three parallel hetero junction bipolar transistors (HBTs) in a common-collector configuration a...

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Bibliographic Details
Published in:	Micromachines
Main Authors:	Julio Heredia, Miquel Ribó, Lluís Pradell, Selin Tolunay Wipf, Alexander Göritz, Matthias Wietstruck, Christian Wipf, Mehmet Kaynak
Format:	Article
Language:	English
Published:	MDPI AG 2019-09-01
Subjects:	low-noise amplifier (LNA) frequency-reconfigurable LNA multimodal circuit SiGe BiCMOS hetero junction bipolar transistor (HBT) RF switch
Online Access:	https://www.mdpi.com/2072-666X/10/10/632

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