APA (7th ed.) Citation

Guan, H., Shen, G., Liu, S., Jiang, C., & Wu, J. (2023, January). A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application. Micromachines.

Chicago Style (17th ed.) Citation

Guan, He, Guiyu Shen, Shibin Liu, Chengyu Jiang, and Jingbo Wu. "A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application." Micromachines Jan. 2023.

MLA (9th ed.) Citation

Guan, He, et al. "A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application." Micromachines, Jan. 2023.