A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application
The effects of barrier layer thickness, Al component of barrier layer, and passivation layer thickness of high-resistance Si (111)-based AlGaN/GaN heterojunction epitaxy on the knee-point voltage (<i>V<sub>knee</sub></i>), saturation current density (<i>I<sub>d-sa...
| 發表在: | Micromachines |
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| Main Authors: | , , , , |
| 格式: | Article |
| 語言: | 英语 |
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MDPI AG
2023-01-01
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| 在線閱讀: | https://www.mdpi.com/2072-666X/14/1/168 |
| _version_ | 1850327647126552576 |
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| author | He Guan Guiyu Shen Shibin Liu Chengyu Jiang Jingbo Wu |
| author_facet | He Guan Guiyu Shen Shibin Liu Chengyu Jiang Jingbo Wu |
| author_sort | He Guan |
| collection | DOAJ |
| container_title | Micromachines |
| description | The effects of barrier layer thickness, Al component of barrier layer, and passivation layer thickness of high-resistance Si (111)-based AlGaN/GaN heterojunction epitaxy on the knee-point voltage (<i>V<sub>knee</sub></i>), saturation current density (<i>I<sub>d-sat</sub></i>), and cut-off frequency (<i>f<sub>t</sub></i>) of its high electron mobility transistor (HEMT) are simulated and analyzed. A novel optimization factor <i>OPTIM</i> is proposed by considering the various performance parameters of the device to reduce the <i>V<sub>knee</sub></i> and improve the <i>I<sub>d-sat</sub></i> on the premise of ensuring the <i>f<sub>t</sub></i>. Based on this factor, the optimized AlGaN/GaN epitaxial structure was designed with a barrier layer thickness of 20 nm, an Al component in the barrier layer of 25%, and a SiN passivation layer of 6 nm. By simulation, when the gate voltage V<sub>g</sub> is 0 V, the designed device with a gate length of 0.15 μm, gate-source spacing of 0.5 μm, and gate-drain spacing of 1 μm presents a high <i>I<sub>d-sat</sub></i> of 750 mA/mm and a low <i>V<sub>knee</sub></i> of 2.0 V and presents <i>f<sub>t</sub></i> and maximum frequency (<i>f<sub>max</sub></i>) as high as 110 GHz and 220 GHz, respectively. The designed device was fabricated and tested to verify the simulation results. We demonstrated the optimization factor <i>OPTIM</i> can provide an effective design method for follow-up high-frequency and low-voltage applications of GaN devices. |
| format | Article |
| id | doaj-art-95ae9d2c7fc94ae18f2a53ba1237eb35 |
| institution | Directory of Open Access Journals |
| issn | 2072-666X |
| language | English |
| publishDate | 2023-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| spelling | doaj-art-95ae9d2c7fc94ae18f2a53ba1237eb352025-08-19T23:19:42ZengMDPI AGMicromachines2072-666X2023-01-0114116810.3390/mi14010168A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor ApplicationHe Guan0Guiyu Shen1Shibin Liu2Chengyu Jiang3Jingbo Wu4School of Microelectronics, Northwestern Polytechnical University, Xi’an 710129, ChinaSchool of Microelectronics, Northwestern Polytechnical University, Xi’an 710129, ChinaSchool of Electronics and Information, Northwestern Polytechnical University, Xi’an 710129, ChinaSchool of Electronics and Information, Northwestern Polytechnical University, Xi’an 710129, ChinaSchool of Microelectronics, Northwestern Polytechnical University, Xi’an 710129, ChinaThe effects of barrier layer thickness, Al component of barrier layer, and passivation layer thickness of high-resistance Si (111)-based AlGaN/GaN heterojunction epitaxy on the knee-point voltage (<i>V<sub>knee</sub></i>), saturation current density (<i>I<sub>d-sat</sub></i>), and cut-off frequency (<i>f<sub>t</sub></i>) of its high electron mobility transistor (HEMT) are simulated and analyzed. A novel optimization factor <i>OPTIM</i> is proposed by considering the various performance parameters of the device to reduce the <i>V<sub>knee</sub></i> and improve the <i>I<sub>d-sat</sub></i> on the premise of ensuring the <i>f<sub>t</sub></i>. Based on this factor, the optimized AlGaN/GaN epitaxial structure was designed with a barrier layer thickness of 20 nm, an Al component in the barrier layer of 25%, and a SiN passivation layer of 6 nm. By simulation, when the gate voltage V<sub>g</sub> is 0 V, the designed device with a gate length of 0.15 μm, gate-source spacing of 0.5 μm, and gate-drain spacing of 1 μm presents a high <i>I<sub>d-sat</sub></i> of 750 mA/mm and a low <i>V<sub>knee</sub></i> of 2.0 V and presents <i>f<sub>t</sub></i> and maximum frequency (<i>f<sub>max</sub></i>) as high as 110 GHz and 220 GHz, respectively. The designed device was fabricated and tested to verify the simulation results. We demonstrated the optimization factor <i>OPTIM</i> can provide an effective design method for follow-up high-frequency and low-voltage applications of GaN devices.https://www.mdpi.com/2072-666X/14/1/168AlGaN/GaN epitaxyHEMTsimulation |
| spellingShingle | He Guan Guiyu Shen Shibin Liu Chengyu Jiang Jingbo Wu A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application AlGaN/GaN epitaxy HEMT simulation |
| title | A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application |
| title_full | A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application |
| title_fullStr | A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application |
| title_full_unstemmed | A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application |
| title_short | A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application |
| title_sort | simulation optimization factor of si 111 based algan gan epitaxy for high frequency and low voltage control high electron mobility transistor application |
| topic | AlGaN/GaN epitaxy HEMT simulation |
| url | https://www.mdpi.com/2072-666X/14/1/168 |
| work_keys_str_mv | AT heguan asimulationoptimizationfactorofsi111basedalganganepitaxyforhighfrequencyandlowvoltagecontrolhighelectronmobilitytransistorapplication AT guiyushen asimulationoptimizationfactorofsi111basedalganganepitaxyforhighfrequencyandlowvoltagecontrolhighelectronmobilitytransistorapplication AT shibinliu asimulationoptimizationfactorofsi111basedalganganepitaxyforhighfrequencyandlowvoltagecontrolhighelectronmobilitytransistorapplication AT chengyujiang asimulationoptimizationfactorofsi111basedalganganepitaxyforhighfrequencyandlowvoltagecontrolhighelectronmobilitytransistorapplication AT jingbowu asimulationoptimizationfactorofsi111basedalganganepitaxyforhighfrequencyandlowvoltagecontrolhighelectronmobilitytransistorapplication AT heguan simulationoptimizationfactorofsi111basedalganganepitaxyforhighfrequencyandlowvoltagecontrolhighelectronmobilitytransistorapplication AT guiyushen simulationoptimizationfactorofsi111basedalganganepitaxyforhighfrequencyandlowvoltagecontrolhighelectronmobilitytransistorapplication AT shibinliu simulationoptimizationfactorofsi111basedalganganepitaxyforhighfrequencyandlowvoltagecontrolhighelectronmobilitytransistorapplication AT chengyujiang simulationoptimizationfactorofsi111basedalganganepitaxyforhighfrequencyandlowvoltagecontrolhighelectronmobilitytransistorapplication AT jingbowu simulationoptimizationfactorofsi111basedalganganepitaxyforhighfrequencyandlowvoltagecontrolhighelectronmobilitytransistorapplication |