A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application

The effects of barrier layer thickness, Al component of barrier layer, and passivation layer thickness of high-resistance Si (111)-based AlGaN/GaN heterojunction epitaxy on the knee-point voltage (<i>V<sub>knee</sub></i>), saturation current density (<i>I<sub>d-sa...

書誌詳細
出版年:	Micromachines
主要な著者:	He Guan, Guiyu Shen, Shibin Liu, Chengyu Jiang, Jingbo Wu
フォーマット:	論文
言語:	英語
出版事項:	MDPI AG 2023-01-01
主題:	AlGaN/GaN epitaxy HEMT simulation
オンライン･アクセス:	https://www.mdpi.com/2072-666X/14/1/168

類似資料

Adsorption Characteristics of an AlGaN/GaN Heterojunction on Potassium Ions
著者:: Yan Dong, 等
出版事項: (2025-06-01)

TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs
著者:: Franco Ercolano, 等
出版事項: (2025-03-01)

Review of the AlGaN/GaN High-Electron-Mobility Transistor-Based Biosensors: Structure, Mechanisms, and Applications
著者:: Chenbi Li, 等
出版事項: (2024-02-01)

Effect of High-Temperature Storage on Electrical Characteristics of Hydrogen-Treated AlGaN/GaN High-Electron-Mobility Transistors
著者:: Bin Zhou, 等
出版事項: (2024-04-01)

Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps
著者:: Yu-Lin Song, 等
出版事項: (2021-06-01)

High Al-content AlGaN channel high electron mobility transistors on silicon substrate
著者:: J. Mehta, 等
出版事項: (2023-03-01)

Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT
著者:: Yusnizam Yusuf, 等
出版事項: (2023-01-01)

Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation
著者:: Moath Alathbah, 等
出版事項: (2022-11-01)

Novel super junction technique used in AlGaN/GaN HEMT for high power applications
著者:: A Arunraja, 等
出版事項: (2022-01-01)

Investigation of High-Sensitivity pH Sensor Based on Au-Gated AlGaN/GaN Heterostructure
著者:: Minjie Ye, 等
出版事項: (2024-07-01)

Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
著者:: Soo Cheol Kang, 等
出版事項: (2020-10-01)

Comparison of Different Cooling Schemes for AlGaN/GaN High-Electron Mobility Transistors
著者:: Yunqian Song, 等
出版事項: (2023-12-01)

Noise Performance Investigation of AlGaN/GaN HEMT With Tall Gate Stem for Millimeter-Wave LNA Application
著者:: Ping-Hsun Lee, 等
出版事項: (2023-01-01)

Effects of GaN Buffer Resistance on the Device Performances of AlGaN/GaN HEMTs
著者:: Ki-Sik Im, 等
出版事項: (2020-09-01)

Temperature-Dependent Electrical Characteristics and Low-Frequency Noise Analysis of AlGaN/GaN HEMTs
著者:: Qiang Chen, 等
出版事項: (2024-01-01)

Influence of the Bias Voltage on Effective Electron Velocity in AlGaN/GaN High Electron Mobility Transistors
著者:: Guangyuan Jiang, 等
出版事項: (2024-09-01)

Novel Stacked Passivation Structure for AlGaN/GaN HEMTs on Silicon With High Johnson’s Figures of Merit
著者:: Xiaoyi Liu, 等
出版事項: (2023-01-01)

Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
著者:: Hanghang Lv, 等
出版事項: (2023-07-01)

Defects Passivation and Performance Enhancement of AlGaN/GaN HEMTs by Supercritical Hydrogen Treatment
著者:: J. K. Lian, 等
出版事項: (2025-01-01)

Process of Au-Free Source/Drain Ohmic Contact to AlGaN/GaN HEMT
著者:: Lin-Qing Zhang, 等
出版事項: (2022-06-01)

High-Sensitivity pH Sensor Based on Coplanar Gate AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor
著者:: Seong-Kun Cho, 等
出版事項: (2021-02-01)

Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress
著者:: Ye Liang, 等
出版事項: (2024-09-01)

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts
著者:: Wojciech Wojtasiak, 等
出版事項: (2018-10-01)

Features of Formation of Ohmic Contacts and Gate on Epitaxial Heterostructure of AlGaN / GaN High Electron Mobility Transistor
著者:: I.A. Rogachev, 等
出版事項: (2016-06-01)

Magnetosensory Power Devices Based on AlGaN/GaN Heterojunctions for Interactive Electronics
著者:: Xingyu Zhou, 等
出版事項: (2023-05-01)

Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure
著者:: An-Chen Liu, 等
出版事項: (2024-04-01)

Modeling the Effects of Threading Dislocations on Current in AlGaN/GaN HEMT
著者:: Censong Liu, 等
出版事項: (2023-01-01)

Effect of Source Field Plate Cracks on the Electrical Performance of AlGaN/GaN HEMT Devices
著者:: Ye-Nan Bie, 等
出版事項: (2022-08-01)

Influence of polarization coulomb field scattering on the subthreshold swing in E-mode p-GaN/AlGaN/GaN HEMTs
著者:: Heyu Liu, 等
出版事項: (2025-01-01)

Research Progress and Development Prospects of Enhanced GaN HEMTs
著者:: Lili Han, 等
出版事項: (2023-06-01)

Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier
著者:: Kathia Harrouche, 等
出版事項: (2023-01-01)

High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology
著者:: Bohan Guo, 等
出版事項: (2024-03-01)

Low-Frequency Noise Behavior of AlGaN/GaN HEMTs with Different Al Compositions
著者:: Yeo Jin Choi, 等
出版事項: (2020-09-01)

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor
著者:: Yan Dong, 等
出版事項: (2018-04-01)

AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO<sub>2</sub> as Passivation and Dielectric Layers
著者:: Yu-Shyan Lin, 等
出版事項: (2023-05-01)

Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications
著者:: Howie Tseng, 等
出版事項: (2024-01-01)

Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers
著者:: Huaixin Guo, 等
出版事項: (2022-09-01)

Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field Plates
著者:: Jianhua Liu, 等
出版事項: (2020-01-01)

High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap Layer
著者:: Ki-Sik Im, 等
出版事項: (2022-02-01)

Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs
著者:: Maodan Ma, 等
出版事項: (2022-12-01)