A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application

The effects of barrier layer thickness, Al component of barrier layer, and passivation layer thickness of high-resistance Si (111)-based AlGaN/GaN heterojunction epitaxy on the knee-point voltage (<i>V<sub>knee</sub></i>), saturation current density (<i>I<sub>d-sa...

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Bibliographic Details
Published in:	Micromachines
Main Authors:	He Guan, Guiyu Shen, Shibin Liu, Chengyu Jiang, Jingbo Wu
Format:	Article
Language:	English
Published:	MDPI AG 2023-01-01
Subjects:	AlGaN/GaN epitaxy HEMT simulation
Online Access:	https://www.mdpi.com/2072-666X/14/1/168

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