The influence of excessive H2 during barrier growth on InGaN light-emitting diodes

The influence of excessive H _2 flow during barrier growth on optical and electrical properties of InGaN light-emitting diodes (LEDs) are investigated in this study. The room temperature photoluminescence of LEDs decays with excessive H _2 treatment. Temperature-dependent photoluminescence (TDPL) re...

書誌詳細
出版年:	Materials Research Express
主要な著者:	Yangfeng Li, Shen Yan, Die Junhui, Xiaotao Hu, Yimeng Song, Zhen Deng, Chunhua Du, Wenqi Wang, Ziguang Ma, Lu Wang, Haiqiang Jia, Wenxin Wang, Junming Zhou, Yang Jiang, Hong Chen
フォーマット:	論文
言語:	英語
出版事項:	IOP Publishing 2020-01-01
主題:	hydrogen InGaN TDPL EQE leakage current
オンライン･アクセス:	https://doi.org/10.1088/2053-1591/abc18f

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