Impacts of homoepitaxial AlN thickness on the qualities of AlGaN QWs fabricated on the face-to-face annealed sputter-deposited AlN templates
AlGaN quantum wells (QWs) emitting at 265 nm were fabricated on face-to-face annealed sputter-deposited AlN (FFA Sp-AlN) templates with n-AlGaN and different homoepitaxial AlN thicknesses (200–2000 nm) by metalorganic vapor phase epitaxy (MOVPE). Thicker MOVPE-AlN led to higher dislocation densities...
| الحاوية / القاعدة: | Applied Physics Express |
|---|---|
| المؤلفون الرئيسيون: | , , , , , , |
| التنسيق: | مقال |
| اللغة: | الإنجليزية |
| منشور في: |
IOP Publishing
2025-01-01
|
| الموضوعات: | |
| الوصول للمادة أونلاين: | https://doi.org/10.35848/1882-0786/ade2b7 |
| _version_ | 1849475176424538112 |
|---|---|
| author | Ryota Akaike Kenjiro Uesugi Kohei Shima Shigefusa F. Chichibu Akira Uedono Takao Nakamura Hideto Miyake |
| author_facet | Ryota Akaike Kenjiro Uesugi Kohei Shima Shigefusa F. Chichibu Akira Uedono Takao Nakamura Hideto Miyake |
| author_sort | Ryota Akaike |
| collection | DOAJ |
| container_title | Applied Physics Express |
| description | AlGaN quantum wells (QWs) emitting at 265 nm were fabricated on face-to-face annealed sputter-deposited AlN (FFA Sp-AlN) templates with n-AlGaN and different homoepitaxial AlN thicknesses (200–2000 nm) by metalorganic vapor phase epitaxy (MOVPE). Thicker MOVPE-AlN led to higher dislocation densities. The type and concentration of vacancies in n-AlGaN, as well as the photoluminescence efficiencies and time-resolved photoluminescence lifetimes of the QWs were nearly unchanged regardless of the MOVPE-AlN thickness, suggesting nearly identical internal quantum efficiencies. The results prove high-quality AlGaN QW growth with only 200 nm thick MOVPE-AlN, resulting in reduced total thickness of AlN by using FFA Sp-AlN. |
| format | Article |
| id | doaj-art-9f8eb4fb5b6f405aaec0e26a70cdb79a |
| institution | Directory of Open Access Journals |
| issn | 1882-0786 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| spelling | doaj-art-9f8eb4fb5b6f405aaec0e26a70cdb79a2025-08-20T03:15:44ZengIOP PublishingApplied Physics Express1882-07862025-01-0118606550310.35848/1882-0786/ade2b7Impacts of homoepitaxial AlN thickness on the qualities of AlGaN QWs fabricated on the face-to-face annealed sputter-deposited AlN templatesRyota Akaike0https://orcid.org/0000-0003-4410-1682Kenjiro Uesugi1https://orcid.org/0000-0003-2605-5440Kohei Shima2https://orcid.org/0000-0003-0967-141XShigefusa F. Chichibu3https://orcid.org/0000-0001-9558-1642Akira Uedono4https://orcid.org/0000-0001-6224-4869Takao Nakamura5https://orcid.org/0009-0006-8787-8933Hideto Miyake6https://orcid.org/0000-0002-1054-666XGraduate School of Engineering, Mie University , Tsu, Mie 514-8507, Japan; Innovation Center for Semiconductor and Digital Future, Mie University , Tsu, Mie 514-8507, JapanMie Regional Plan Co-creation Organization, Mie University , Tsu, Mie 514-8507, Japan; Graduate School of Regional Innovation Studies, Mie University , Tsu, Mie 514-8507, JapanInstitute of Multidisciplinary Research for Advanced Materials, Tohoku University , Sendai, Miyagi 980-8577, JapanInstitute of Multidisciplinary Research for Advanced Materials, Tohoku University , Sendai, Miyagi 980-8577, JapanDivision of Applied Physics Faculty of Pure and Applied Science, University of Tsukuba , Tsukuba, Ibaraki 305-8573, JapanGraduate School of Engineering, Mie University , Tsu, Mie 514-8507, Japan; Innovation Center for Semiconductor and Digital Future, Mie University , Tsu, Mie 514-8507, JapanGraduate School of Engineering, Mie University , Tsu, Mie 514-8507, Japan; Innovation Center for Semiconductor and Digital Future, Mie University , Tsu, Mie 514-8507, JapanAlGaN quantum wells (QWs) emitting at 265 nm were fabricated on face-to-face annealed sputter-deposited AlN (FFA Sp-AlN) templates with n-AlGaN and different homoepitaxial AlN thicknesses (200–2000 nm) by metalorganic vapor phase epitaxy (MOVPE). Thicker MOVPE-AlN led to higher dislocation densities. The type and concentration of vacancies in n-AlGaN, as well as the photoluminescence efficiencies and time-resolved photoluminescence lifetimes of the QWs were nearly unchanged regardless of the MOVPE-AlN thickness, suggesting nearly identical internal quantum efficiencies. The results prove high-quality AlGaN QW growth with only 200 nm thick MOVPE-AlN, resulting in reduced total thickness of AlN by using FFA Sp-AlN.https://doi.org/10.35848/1882-0786/ade2b7face-to-face annealed sputter-deposited AlNquantum wellphotoluminescenceAlGaNpositron annihilationtime resolved photoluminescence |
| spellingShingle | Ryota Akaike Kenjiro Uesugi Kohei Shima Shigefusa F. Chichibu Akira Uedono Takao Nakamura Hideto Miyake Impacts of homoepitaxial AlN thickness on the qualities of AlGaN QWs fabricated on the face-to-face annealed sputter-deposited AlN templates face-to-face annealed sputter-deposited AlN quantum well photoluminescence AlGaN positron annihilation time resolved photoluminescence |
| title | Impacts of homoepitaxial AlN thickness on the qualities of AlGaN QWs fabricated on the face-to-face annealed sputter-deposited AlN templates |
| title_full | Impacts of homoepitaxial AlN thickness on the qualities of AlGaN QWs fabricated on the face-to-face annealed sputter-deposited AlN templates |
| title_fullStr | Impacts of homoepitaxial AlN thickness on the qualities of AlGaN QWs fabricated on the face-to-face annealed sputter-deposited AlN templates |
| title_full_unstemmed | Impacts of homoepitaxial AlN thickness on the qualities of AlGaN QWs fabricated on the face-to-face annealed sputter-deposited AlN templates |
| title_short | Impacts of homoepitaxial AlN thickness on the qualities of AlGaN QWs fabricated on the face-to-face annealed sputter-deposited AlN templates |
| title_sort | impacts of homoepitaxial aln thickness on the qualities of algan qws fabricated on the face to face annealed sputter deposited aln templates |
| topic | face-to-face annealed sputter-deposited AlN quantum well photoluminescence AlGaN positron annihilation time resolved photoluminescence |
| url | https://doi.org/10.35848/1882-0786/ade2b7 |
| work_keys_str_mv | AT ryotaakaike impactsofhomoepitaxialalnthicknessonthequalitiesofalganqwsfabricatedonthefacetofaceannealedsputterdepositedalntemplates AT kenjirouesugi impactsofhomoepitaxialalnthicknessonthequalitiesofalganqwsfabricatedonthefacetofaceannealedsputterdepositedalntemplates AT koheishima impactsofhomoepitaxialalnthicknessonthequalitiesofalganqwsfabricatedonthefacetofaceannealedsputterdepositedalntemplates AT shigefusafchichibu impactsofhomoepitaxialalnthicknessonthequalitiesofalganqwsfabricatedonthefacetofaceannealedsputterdepositedalntemplates AT akirauedono impactsofhomoepitaxialalnthicknessonthequalitiesofalganqwsfabricatedonthefacetofaceannealedsputterdepositedalntemplates AT takaonakamura impactsofhomoepitaxialalnthicknessonthequalitiesofalganqwsfabricatedonthefacetofaceannealedsputterdepositedalntemplates AT hidetomiyake impactsofhomoepitaxialalnthicknessonthequalitiesofalganqwsfabricatedonthefacetofaceannealedsputterdepositedalntemplates |