Lou, Z., Mamee, T., Hata, K., Takamiya, M., Nishizawa, S., & Saito, W. (2024, April). Mechanism of gate voltage spike under digital gate control at IGBT switching operations. Power Electronic Devices and Components.
Chicago Style (17th ed.) CitationLou, Zaiqi, Thatree Mamee, Katsuhiro Hata, Makoto Takamiya, Shin-ichi Nishizawa, and Wataru Saito. "Mechanism of Gate Voltage Spike Under Digital Gate Control at IGBT Switching Operations." Power Electronic Devices and Components Apr. 2024.
MLA (9th ed.) CitationLou, Zaiqi, et al. "Mechanism of Gate Voltage Spike Under Digital Gate Control at IGBT Switching Operations." Power Electronic Devices and Components, Apr. 2024.
Warning: These citations may not always be 100% accurate.
