Mechanism of gate voltage spike under digital gate control at IGBT switching operations

This paper reports the mechanism of gate voltage spike in the turn-off operation by a digital gate control. In the previous work, it was clarified that the gate voltage spike Vg_spike was generated by parasitic inductance and a large gate current change due to the digital gate control. However, the...

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Bibliographic Details
Published in:	Power Electronic Devices and Components
Main Authors:	Zaiqi Lou, Thatree Mamee, Katsuhiro Hata, Makoto Takamiya, Shin-ichi Nishizawa, Wataru Saito
Format:	Article
Language:	English
Published:	Elsevier 2024-04-01
Subjects:	IGBT modules Digital gate driver Stray capacitance Gate voltage spike
Online Access:	http://www.sciencedirect.com/science/article/pii/S2772370423000226

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