Use of the Porous A3B5 Compounds for Supercapacitor Electrodes
Use of GaAs and GaP porous plates is proposed as a replacement of activated carbon electrodes for supercapacitors. Porous electrodes are prepared by electrochemical etching. Description of the production technique of supercapacitors based on porous semiconductors A3B5 is presented. Area of the porou...
| 出版年: | Журнал нано- та електронної фізики |
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| 主要な著者: | , |
| フォーマット: | 論文 |
| 言語: | 英語 |
| 出版事項: |
Sumy State University
2015-03-01
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| 主題: | |
| オンライン･アクセス: | http://jnep.sumdu.edu.ua/download/numbers/2015/1/articles/jnep_2015_V7_01021.pdf |
| 要約: | Use of GaAs and GaP porous plates is proposed as a replacement of activated carbon electrodes for supercapacitors. Porous electrodes are prepared by electrochemical etching. Description of the production technique of supercapacitors based on porous semiconductors A3B5 is presented. Area of the porous surface is defined by gas adsorption method. The method for calculation of supercapacitor capacitance created on GaAs and GaP porous plates is described. |
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| ISSN: | 2077-6772 |