Defect Inspection Techniques in SiC

• 出版年: Nanoscale Research Letters
• 主要な著者: Po-Chih Chen, Wen-Chien Miao, Tanveer Ahmed, Yi-Yu Pan, Chun-Liang Lin, Shih-Chen Chen, Hao-Chung Kuo, Bing-Yue Tsui, Der-Hsien Lien
• フォーマット: 論文
• 言語: 英語
• 出版事項: SpringerOpen 2022-03-01
• 主題: SiC; Killer defect; Defect inspection technology
• オンライン･アクセス: https://doi.org/10.1186/s11671-022-03672-w

Abstract With the increasing demand of silicon carbide (SiC) power devices that outperform the silicon-based devices, high cost and low yield of SiC manufacturing process are the most urgent issues yet to be solved. It has been shown that the performance of SiC devices is largely influenced by the presence of so-called killer defects, formed during the process of crystal growth. In parallel to the improvement of the growth techniques for reducing defect density, a post-growth inspection technique capable of identifying and locating defects has become a crucial necessity of the manufacturing process. In this review article, we provide an outlook on SiC defect inspection technologies and the impact of defects on SiC devices. This review also discusses the potential solutions to improve the existing inspection technologies and approaches to reduce the defect density, which are beneficial to mass production of high-quality SiC devices.