Defect Inspection Techniques in SiC

Abstract With the increasing demand of silicon carbide (SiC) power devices that outperform the silicon-based devices, high cost and low yield of SiC manufacturing process are the most urgent issues yet to be solved. It has been shown that the performance of SiC devices is largely influenced by the p...

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Bibliographic Details
Published in:	Nanoscale Research Letters
Main Authors:	Po-Chih Chen, Wen-Chien Miao, Tanveer Ahmed, Yi-Yu Pan, Chun-Liang Lin, Shih-Chen Chen, Hao-Chung Kuo, Bing-Yue Tsui, Der-Hsien Lien
Format:	Article
Language:	English
Published:	SpringerOpen 2022-03-01
Subjects:	SiC Killer defect Defect inspection technology
Online Access:	https://doi.org/10.1186/s11671-022-03672-w

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