Critical modeling issues of SiGe semiconductor devices

We present the state-of-the-art in simulation of silicon-germanium (SiGe) semiconductor devices. The work includes a detailed comparison of device simulators and current transport models. Among the critical modeling issues addressed in the paper, special attention is focused on the description of t...

書誌詳細
出版年:	Journal of Telecommunications and Information Technology
主要な著者:	Vassil Palankovski, Siegfried Selberherr
フォーマット:	論文
言語:	英語
出版事項:	National Institute of Telecommunications 2004-03-01
主題:	SiGe HBT numerical simulation modeling bandgap mobility small-signal simulation
オンライン･アクセス:	https://jtit.pl/jtit/article/view/233

類似資料

CVD growth of high speed SiGe HBTs using SiH4
著者:: Henry H. Radamson, 等
出版事項: (2000-12-01)

SiGe HBT wideband amplifier for millimeter wave applications
著者:: Marco Krˇcmar, 等
出版事項: (2023-06-01)

Thermal Gas Flow Sensor Using SiGe HBT Oscillators Based on GaN/Si SAW Resonators
著者:: Wenpu Cui, 等
出版事項: (2025-10-01)

A 20–44 GHz Wideband LNA Design Using the SiGe Technology for 5G Millimeter-Wave Applications
著者:: Warsha Balani, 等
出版事項: (2021-12-01)

SiGe field effect transistors
著者:: Terrence E. Whall, 等
出版事項: (2001-03-01)

Strained Si and SiGe Nanowire Tunnel FETs for Logic and Analog Applications
著者:: Qing-Tai Zhao, 等
出版事項: (2015-01-01)

Silicon-germanium for ULSI
著者:: Steve Hall, 等
出版事項: (2000-12-01)

Wideband SiGe-HBT Low-Noise Amplifier with Resistive Feedback and Shunt Peaking
著者:: Ickhyun Song, 等
出版事項: (2023-07-01)

Distributed Small-Signal Equivalent Circuit Model and Parameter Extraction for SiGe HBT
著者:: Yabin Sun, 等
出版事項: (2019-01-01)

Integrated SiGe Detectors for Si Photonic Sensor Platforms
著者:: Grégory Pandraud, 等
出版事項: (2017-08-01)

Optimizing the Emitter Layer for Higher Efficiency Solar Cell Based SiGe Using AMPS1D
著者:: Boukais Meriem, 等
出版事項: (2015-10-01)

Si and SiGe Nanowire for Micro-Thermoelectric Generator: A Review of the Current State of the Art
著者:: You Li, 等
出版事項: (2021-03-01)

Thermoelectric Properties of Oblique SiGe Whiskers
著者:: A. Druzhinin, 等
出版事項: (2016-06-01)

SiGe HBT low noise amplifiers for ultra-wideband systems
著者:: Popov V. P., 等
出版事項: (2013-02-01)

Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors
著者:: Wei-Ting eLai, 等
出版事項: (2016-02-01)

Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation
著者:: Ferragut R, 等
出版事項: (2010-01-01)

The main characteristics of SiGe HBTs at low temperatures
著者:: О. V. Dvornikov, 等
出版事項: (2016-09-01)

SiGe high-frequency pulse-width modulation for low-noise applications
著者:: John Suarez
出版事項: (2024-12-01)

Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition
著者:: Loh Ter-Hoe, 等
出版事項: (2007-01-01)

Analysis of High Energy Ion, Proton And Co-60 Gamma Radiation Induced Damage in Advanced 200 GHz SiGe HBTs
著者:: K.C. Praveen, 等
出版事項: (2011-01-01)

Atomic‐scale strain analysis for advanced Si/SiGe heterostructure by using transmission electron microscopy
著者:: Lan Li, 等
出版事項: (2024-05-01)

Optimizing Germanium-Selective Functionalization on Patterned SiGe Substrates with Thiol-Based Molecules: The Critical Role of Oxygen-Free Conditions
著者:: Alessia Arrigoni, 等
出版事項: (2024-12-01)

Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands
著者:: Brehm M, 等
出版事項: (2010-01-01)

SiGe/Si Multi-Quantum-Well Micro-Bolometer Array Design and Fabrication with Heterogeneous Integration
著者:: Zhong Fang, 等
出版事項: (2021-12-01)

275 GHz Quadrature Receivers for THz-Band 6G Indoor Network in 130-nm SiGe Technology
著者:: Jeong-Moon Song, 等
出版事項: (2023-01-01)

Modeling of the inverse base width modulation effect in HBT transistor with graded SiGe base
著者:: Agnieszka Zaręba, 等
出版事項: (2023-06-01)

Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics
著者:: Yongliang Li, 等
出版事項: (2021-06-01)

Direct Observation of Etching‐Induced Inhomogeneous Strain in Advanced Si/SiGe Stack for Gate‐All‐Around Transistor
著者:: Lan Li, 等
出版事項: (2025-09-01)

High-Performance P- and N-Type SiGe/Si Strained Super-Lattice FinFET and CMOS Inverter: Comparison of Si and SiGe FinFET
著者:: Yi-Ju Yao, 等
出版事項: (2023-04-01)

A 77 GHz Power Amplifier with 19.1 dBm Peak Output Power in 130 nm SiGe Process
著者:: Peigen Zhou, 等
出版事項: (2023-12-01)

Characterization of Mn<sub>5</sub>Ge<sub>3</sub> Contacts on a Shallow Ge/SiGe Heterostructure
著者:: Troy A. Hutchins-Delgado, 等
出版事項: (2024-03-01)

Numerical Simulations of Space Charge Waves Amplification Using Negative Differential Conductance in Strained Si/SiGe at 4.2 K
著者:: Abel Garcia-Barrientos, 等
出版事項: (2023-09-01)

A 0.049 mm<sup>2</sup> 0.5-to-5.8 GHz LNA Achieving a Flat High Gain Based on an Active Inductor and Low Capacitive ESD Protection
著者:: Dawei Dong, 等
出版事項: (2025-07-01)

Recent Progress on Ge/SiGe Quantum Well Optical Modulators, Detectors, and Emitters for Optical Interconnects
著者:: Papichaya Chaisakul, 等
出版事項: (2019-03-01)

Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots
著者:: Cui Jian, 等
出版事項: (2011-01-01)

Layer Exchange Synthesis of SiGe for Flexible Thermoelectric Generators: A Comprehensive Review
著者:: Kaoru Toko, 等
出版事項: (2024-07-01)

FDTD analysis of direct optical integration between SiNx waveguides and Ge/SiGe multiple quantum wells on graded buffer for low-voltage optical modulators around the O-band wavelength
著者:: Inthanee Thongyim, 等
出版事項: (2024-02-01)

Transitioning from Si to SiGe Nanowires as Thermoelectric Material in Silicon-Based Microgenerators
著者:: Luis Fonseca, 等
出版事項: (2021-02-01)

Capas de SiGe policristalino hidrogenado y su aplicación en transistores de película delgada
著者:: Rodríguez, A., 等
出版事項: (2004-04-01)

Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography
著者:: Merdzhanova T, 等
出版事項: (2009-01-01)