Critical modeling issues of SiGe semiconductor devices

We present the state-of-the-art in simulation of silicon-germanium (SiGe) semiconductor devices. The work includes a detailed comparison of device simulators and current transport models. Among the critical modeling issues addressed in the paper, special attention is focused on the description of t...

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Bibliographic Details
Published in:	Journal of Telecommunications and Information Technology
Main Authors:	Vassil Palankovski, Siegfried Selberherr
Format:	Article
Language:	English
Published:	National Institute of Telecommunications 2004-03-01
Subjects:	SiGe HBT numerical simulation modeling bandgap mobility small-signal simulation
Online Access:	https://jtit.pl/jtit/article/view/233

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