Cathodoluminescence of Ultrathin InAs Layers Embedded in GaAs Matrix

Ultrathin InAs layers with different thicknesses, from 0.75 to 1.4 monolayer, are grown in the GaAs matrix by molecular beam epitaxy on GaAs (001) substrates. For sub-monolayer heterostructures, islands or segregations exist during the growth process. Taking advantage of the high spatial resolution...

書目詳細資料
發表在:	Crystals
Main Authors:	Qigeng Yan, Siyuan Wang, Xiaojin Guan, Lei He, Kesheng Sun, Baolai Liang
格式:	Article
語言:	英语
出版:	MDPI AG 2022-08-01
主題:	cathodoluminescence ultrathin InAs nanostructures III-V heterostructures
在線閱讀:	https://www.mdpi.com/2073-4352/12/9/1225

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