New SiC Microwire-Based Ion Sensitive Junction Field Effect Transistors (SiC ISJFETs) for pH Sensing

For the first time, we have implemented new kinds of ISFETs based on silicon carbide (SiC). Thanks to its chemical inertness, SiC is an interesting semiconductor for the development of chemically robust and biocompatible ISFETs. The challenge is to replace Si NWFETs for biochemical sensing due to th...

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Bibliographic Details
Published in:Proceedings
Main Authors: Olfa Karker, Konstantinos Zekentes, Nicolaos Makris, Edwige Bano, Valérie Stambouli
Format: Article
Language:English
Published: MDPI AG 2024-03-01
Subjects:
silicon carbide SiC
pH sensor
ISFET
Online Access:https://www.mdpi.com/2504-3900/97/1/98
Description
Summary:For the first time, we have implemented new kinds of ISFETs based on silicon carbide (SiC). Thanks to its chemical inertness, SiC is an interesting semiconductor for the development of chemically robust and biocompatible ISFETs. The challenge is to replace Si NWFETs for biochemical sensing due to the lack of long-term stability of Si NWs in aqueous solutions. More particularly, we fabricated a micro/nanowire SiC-based ion-sensitive junction field-effect transistor (SiC-ISJFET) and studied its sensitivity to pH variations. The obtained sensitivity reaches 500 mV/pH, making it the first SiC pH sensor with performance equaling that of the latest NWFET Si-based pH sensors.
ISSN:2504-3900

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