Highly Efficient Silicon Nanowire Surface Passivation by Bismuth Nano-Coating for Multifunctional Bi@SiNWs Heterostructures
A key requirement for the development of highly efficient silicon nanowires (SiNWs) for use in various kinds of cutting-edge applications is the outstanding passivation of their surfaces. In this vein, we report on a superior passivation of a SiNWs surface by bismuth nano-coating (BiNC) for the firs...
| Published in: | Nanomaterials |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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MDPI AG
2020-07-01
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| Online Access: | https://www.mdpi.com/2079-4991/10/8/1434 |
| _version_ | 1849879315194314752 |
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| author | Mariem Naffeti Pablo Aitor Postigo Radhouane Chtourou Mohamed Ali Zaïbi |
| author_facet | Mariem Naffeti Pablo Aitor Postigo Radhouane Chtourou Mohamed Ali Zaïbi |
| author_sort | Mariem Naffeti |
| collection | DOAJ |
| container_title | Nanomaterials |
| description | A key requirement for the development of highly efficient silicon nanowires (SiNWs) for use in various kinds of cutting-edge applications is the outstanding passivation of their surfaces. In this vein, we report on a superior passivation of a SiNWs surface by bismuth nano-coating (BiNC) for the first time. A metal-assisted chemical etching technique was used to produce the SiNW arrays, while the BiNCs were anchored on the NWs through thermal evaporation. The systematic studies by Scanning Electron Microscopy (SEM), energy dispersive X-ray spectra (EDX), and Fourier Transform Infra-Red (FTIR) spectroscopies highlight the successful decoration of SiNWs by BiNC. The photoluminescence (PL) emission properties of the samples were studied in the visible and near-infrared (NIR) spectral range. Interestingly, nine-fold visible PL enhancement and NIR broadband emission were recorded for the Bi-modified SiNWs. To our best knowledge, this is the first observation of NIR luminescence from Bi-coated SiNWs (Bi@SiNWs), and thus sheds light on a new family of Bi-doped materials operating in the NIR and covering the important telecommunication wavelengths. Excellent anti-reflectance abilities of ~10% and 8% are observed for pure SiNWs and Bi@SiNWs, respectively, as compared to the Si wafer (50–90%). A large decrease in the recombination activities is also obtained from Bi@SiNWs heterostructures. The reasons behind the superior improvement of the Bi@SiNWs performance are discussed in detail. The findings demonstrate the effectiveness of Bi as a novel surface passivation coating, where Bi@SiNWs heterostructures are very promising and multifunctional for photovoltaics, optoelectronics, and telecommunications. |
| format | Article |
| id | doaj-art-bcc2fb5ca8564c5094b62b72b190aa02 |
| institution | Directory of Open Access Journals |
| issn | 2079-4991 |
| language | English |
| publishDate | 2020-07-01 |
| publisher | MDPI AG |
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| spelling | doaj-art-bcc2fb5ca8564c5094b62b72b190aa022025-08-20T01:10:25ZengMDPI AGNanomaterials2079-49912020-07-01108143410.3390/nano10081434Highly Efficient Silicon Nanowire Surface Passivation by Bismuth Nano-Coating for Multifunctional Bi@SiNWs HeterostructuresMariem Naffeti0Pablo Aitor Postigo1Radhouane Chtourou2Mohamed Ali Zaïbi3Laboratory of Nanomaterials and Systems for Renewable Energies (LaNSER), Research and Technology Center of Energy, Techno-Park Borj-Cedria, Bp 95, Hammam-Lif, Tunis 2050, TunisiaInstituto de Micro y Nanotecnología, IMN-CNM, CSIC (CEI UAM+CSIC) Isaac Newton, 8, E-28760 Tres Cantos, 28760 Madrid, SpainLaboratory of Nanomaterials and Systems for Renewable Energies (LaNSER), Research and Technology Center of Energy, Techno-Park Borj-Cedria, Bp 95, Hammam-Lif, Tunis 2050, TunisiaLaboratory of Nanomaterials and Systems for Renewable Energies (LaNSER), Research and Technology Center of Energy, Techno-Park Borj-Cedria, Bp 95, Hammam-Lif, Tunis 2050, TunisiaA key requirement for the development of highly efficient silicon nanowires (SiNWs) for use in various kinds of cutting-edge applications is the outstanding passivation of their surfaces. In this vein, we report on a superior passivation of a SiNWs surface by bismuth nano-coating (BiNC) for the first time. A metal-assisted chemical etching technique was used to produce the SiNW arrays, while the BiNCs were anchored on the NWs through thermal evaporation. The systematic studies by Scanning Electron Microscopy (SEM), energy dispersive X-ray spectra (EDX), and Fourier Transform Infra-Red (FTIR) spectroscopies highlight the successful decoration of SiNWs by BiNC. The photoluminescence (PL) emission properties of the samples were studied in the visible and near-infrared (NIR) spectral range. Interestingly, nine-fold visible PL enhancement and NIR broadband emission were recorded for the Bi-modified SiNWs. To our best knowledge, this is the first observation of NIR luminescence from Bi-coated SiNWs (Bi@SiNWs), and thus sheds light on a new family of Bi-doped materials operating in the NIR and covering the important telecommunication wavelengths. Excellent anti-reflectance abilities of ~10% and 8% are observed for pure SiNWs and Bi@SiNWs, respectively, as compared to the Si wafer (50–90%). A large decrease in the recombination activities is also obtained from Bi@SiNWs heterostructures. The reasons behind the superior improvement of the Bi@SiNWs performance are discussed in detail. The findings demonstrate the effectiveness of Bi as a novel surface passivation coating, where Bi@SiNWs heterostructures are very promising and multifunctional for photovoltaics, optoelectronics, and telecommunications.https://www.mdpi.com/2079-4991/10/8/1434Si nanowiresBi nano-coatingsurface passivationvisible-NIR emissionantireflectionminority carrier lifetime |
| spellingShingle | Mariem Naffeti Pablo Aitor Postigo Radhouane Chtourou Mohamed Ali Zaïbi Highly Efficient Silicon Nanowire Surface Passivation by Bismuth Nano-Coating for Multifunctional Bi@SiNWs Heterostructures Si nanowires Bi nano-coating surface passivation visible-NIR emission antireflection minority carrier lifetime |
| title | Highly Efficient Silicon Nanowire Surface Passivation by Bismuth Nano-Coating for Multifunctional Bi@SiNWs Heterostructures |
| title_full | Highly Efficient Silicon Nanowire Surface Passivation by Bismuth Nano-Coating for Multifunctional Bi@SiNWs Heterostructures |
| title_fullStr | Highly Efficient Silicon Nanowire Surface Passivation by Bismuth Nano-Coating for Multifunctional Bi@SiNWs Heterostructures |
| title_full_unstemmed | Highly Efficient Silicon Nanowire Surface Passivation by Bismuth Nano-Coating for Multifunctional Bi@SiNWs Heterostructures |
| title_short | Highly Efficient Silicon Nanowire Surface Passivation by Bismuth Nano-Coating for Multifunctional Bi@SiNWs Heterostructures |
| title_sort | highly efficient silicon nanowire surface passivation by bismuth nano coating for multifunctional bi sinws heterostructures |
| topic | Si nanowires Bi nano-coating surface passivation visible-NIR emission antireflection minority carrier lifetime |
| url | https://www.mdpi.com/2079-4991/10/8/1434 |
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