Band Gap Engineering of Newly Discovered ZnO/ZnS Polytypic Nanomaterials
We report on a new class of ZnO/ZnS nanomaterials based on the wurtzite/sphalerite architecture with improved electronic properties. Semiconducting properties of pristine ZnO and ZnS compounds and mixed ZnO<sub>1−x</sub>S<sub>x</sub> nanomaterials have been investigated using...
| 出版年: | Nanomaterials |
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| 主要な著者: | , , , , |
| フォーマット: | 論文 |
| 言語: | 英語 |
| 出版事項: |
MDPI AG
2022-05-01
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| 主題: | |
| オンライン・アクセス: | https://www.mdpi.com/2079-4991/12/9/1595 |
| _version_ | 1850080044414664704 |
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| author | Dejan Zagorac Jelena Zagorac Milan Pejić Branko Matović Johann Christian Schön |
| author_facet | Dejan Zagorac Jelena Zagorac Milan Pejić Branko Matović Johann Christian Schön |
| author_sort | Dejan Zagorac |
| collection | DOAJ |
| container_title | Nanomaterials |
| description | We report on a new class of ZnO/ZnS nanomaterials based on the wurtzite/sphalerite architecture with improved electronic properties. Semiconducting properties of pristine ZnO and ZnS compounds and mixed ZnO<sub>1−x</sub>S<sub>x</sub> nanomaterials have been investigated using ab initio methods. In particular, we present the results of our theoretical investigation on the electronic structure of the ZnO<sub>1−x</sub>S<sub>x</sub> (x = 0.20, 0.25, 0.33, 0.50, 0.60, 0.66, and 0.75) nanocrystalline polytypes (2H, 3C, 4H, 5H, 6H, 8H, 9R, 12R, and 15R) calculated using hybrid PBE0 and HSE06 functionals. The main observations are the possibility of alternative polytypic nanomaterials, the effects of structural features of such polytypic nanostructures on semiconducting properties of ZnO/ZnS nanomaterials, the ability to tune the band gap as a function of sulfur content, as well as the influence of the location of sulfur layers in the structure that can dramatically affect electronic properties. Our study opens new fields of ZnO/ZnS band gap engineering on a multi-scale level with possible applications in photovoltaics, light-emitting diodes, laser diodes, heterojunction solar cells, infrared detectors, thermoelectrics, or/and nanostructured ceramics. |
| format | Article |
| id | doaj-art-bd4792a98e9c44d9b33d9c35da59e6c1 |
| institution | Directory of Open Access Journals |
| issn | 2079-4991 |
| language | English |
| publishDate | 2022-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| spelling | doaj-art-bd4792a98e9c44d9b33d9c35da59e6c12025-08-20T00:13:29ZengMDPI AGNanomaterials2079-49912022-05-01129159510.3390/nano12091595Band Gap Engineering of Newly Discovered ZnO/ZnS Polytypic NanomaterialsDejan Zagorac0Jelena Zagorac1Milan Pejić2Branko Matović3Johann Christian Schön4Materials Science Laboratory, Institute of Nuclear Sciences “Vinča”, University of Belgrade, 11000 Belgrade, SerbiaMaterials Science Laboratory, Institute of Nuclear Sciences “Vinča”, University of Belgrade, 11000 Belgrade, SerbiaMaterials Science Laboratory, Institute of Nuclear Sciences “Vinča”, University of Belgrade, 11000 Belgrade, SerbiaMaterials Science Laboratory, Institute of Nuclear Sciences “Vinča”, University of Belgrade, 11000 Belgrade, SerbiaNanoscale Science Department, Max Planck Institute for Solid State Research, 70569 Stuttgart, GermanyWe report on a new class of ZnO/ZnS nanomaterials based on the wurtzite/sphalerite architecture with improved electronic properties. Semiconducting properties of pristine ZnO and ZnS compounds and mixed ZnO<sub>1−x</sub>S<sub>x</sub> nanomaterials have been investigated using ab initio methods. In particular, we present the results of our theoretical investigation on the electronic structure of the ZnO<sub>1−x</sub>S<sub>x</sub> (x = 0.20, 0.25, 0.33, 0.50, 0.60, 0.66, and 0.75) nanocrystalline polytypes (2H, 3C, 4H, 5H, 6H, 8H, 9R, 12R, and 15R) calculated using hybrid PBE0 and HSE06 functionals. The main observations are the possibility of alternative polytypic nanomaterials, the effects of structural features of such polytypic nanostructures on semiconducting properties of ZnO/ZnS nanomaterials, the ability to tune the band gap as a function of sulfur content, as well as the influence of the location of sulfur layers in the structure that can dramatically affect electronic properties. Our study opens new fields of ZnO/ZnS band gap engineering on a multi-scale level with possible applications in photovoltaics, light-emitting diodes, laser diodes, heterojunction solar cells, infrared detectors, thermoelectrics, or/and nanostructured ceramics.https://www.mdpi.com/2079-4991/12/9/1595ZnO/ZnSpolytypesband gapab initiosemiconductorsnanostructured ceramics |
| spellingShingle | Dejan Zagorac Jelena Zagorac Milan Pejić Branko Matović Johann Christian Schön Band Gap Engineering of Newly Discovered ZnO/ZnS Polytypic Nanomaterials ZnO/ZnS polytypes band gap ab initio semiconductors nanostructured ceramics |
| title | Band Gap Engineering of Newly Discovered ZnO/ZnS Polytypic Nanomaterials |
| title_full | Band Gap Engineering of Newly Discovered ZnO/ZnS Polytypic Nanomaterials |
| title_fullStr | Band Gap Engineering of Newly Discovered ZnO/ZnS Polytypic Nanomaterials |
| title_full_unstemmed | Band Gap Engineering of Newly Discovered ZnO/ZnS Polytypic Nanomaterials |
| title_short | Band Gap Engineering of Newly Discovered ZnO/ZnS Polytypic Nanomaterials |
| title_sort | band gap engineering of newly discovered zno zns polytypic nanomaterials |
| topic | ZnO/ZnS polytypes band gap ab initio semiconductors nanostructured ceramics |
| url | https://www.mdpi.com/2079-4991/12/9/1595 |
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