| Summary: | GaSb crystal ingots were grown with vertical Bridgman method. The effects of temperature gradient on the structure and properties of GaSb crystals were investigated. When the temperature gradient increased from 5 to 7 °C cm ^−1 , the crystallinity of the ingot improved, the dislocation density decreased by 55%, from 3928 to 1785 cm ^−2 ; the carrier mobility increased by 29.6%, from 868 to 1125 cm ^2 V ^−1 · s ^−1 ; the resistivity decreased 50.6%, from 12.45 to 6.332 × 10 ^–3 Ω · cm; the infrared transmission increased from 27% to 32%. When the temperature gradient increased from to 7 to 9 °C cm ^−1 , the crystallinity of the ingot deteriorated obviously, the dislocation density increased 4.38 times, from 3928 to 9609 cm ^−2 ; the carrier mobility decreased by 52.4%, from 1125 to 738 cm ^2 V ^−1 · s ^−1 ; the resistivity increased 6.2 times, from 6.332 to 23.94 × 10 ^–3 Ω · cm; the infrared transmission decreased from 32% to 25%.
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