Twin Domain Structure in Magnetically Doped Bi<sub>2</sub>Se<sub>3</sub> Topological Insulator
Twin domains are naturally present in the topological insulator Bi<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>Se<inline-formula><ma...
| Published in: | Nanomaterials |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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MDPI AG
2020-10-01
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| Online Access: | https://www.mdpi.com/2079-4991/10/10/2059 |
| _version_ | 1850309683145867264 |
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| author | Jakub Šebesta Karel Carva Dominik Kriegner Jan Honolka |
| author_facet | Jakub Šebesta Karel Carva Dominik Kriegner Jan Honolka |
| author_sort | Jakub Šebesta |
| collection | DOAJ |
| container_title | Nanomaterials |
| description | Twin domains are naturally present in the topological insulator Bi<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>Se<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula> and strongly affect its properties. While studies of their behavior in an otherwise ideal Bi<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>Se<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula> structure exist, little is known about their possible interaction with other defects. Extra information is needed, especially for the case of an artificial perturbation of topological insulator states by magnetic doping, which has attracted a lot of attention recently. Employing ab initio calculations based on a layered Green’s function formalism, we study the interaction between twin planes in Bi<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>Se<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula>. We show the influence of various magnetic and nonmagnetic chemical defects on the twin plane formation energy and discuss the related modification of their distribution. Furthermore, we examine the change of the dopants’ magnetic properties at sites in the vicinity of a twin plane, and the dopants’ preference to occupy such sites. Our results suggest that twin planes repel each other at least over a vertical distance of 3–4 nm. However, in the presence of magnetic Mn or Fe defects, a close twin plane placement is preferred. Furthermore, calculated twin plane formation energies indicate that in this situation their formation becomes suppressed. Finally, we discuss the influence of twin planes on the surface band gap. |
| format | Article |
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| issn | 2079-4991 |
| language | English |
| publishDate | 2020-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| spelling | doaj-art-bef17aa22a304a9aa22c2eb0803d5d7e2025-08-19T23:27:36ZengMDPI AGNanomaterials2079-49912020-10-011010205910.3390/nano10102059Twin Domain Structure in Magnetically Doped Bi<sub>2</sub>Se<sub>3</sub> Topological InsulatorJakub Šebesta0Karel Carva1Dominik Kriegner2Jan Honolka3Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121 16 Praha 2, Czech RepublicDepartment of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121 16 Praha 2, Czech RepublicInstitute of Physics, Academy of Science of the Czech Republic, Na Slovance 2, 182 21 Praha 8, Czech RepublicInstitute of Physics, Academy of Science of the Czech Republic, Na Slovance 2, 182 21 Praha 8, Czech RepublicTwin domains are naturally present in the topological insulator Bi<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>Se<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula> and strongly affect its properties. While studies of their behavior in an otherwise ideal Bi<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>Se<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula> structure exist, little is known about their possible interaction with other defects. Extra information is needed, especially for the case of an artificial perturbation of topological insulator states by magnetic doping, which has attracted a lot of attention recently. Employing ab initio calculations based on a layered Green’s function formalism, we study the interaction between twin planes in Bi<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>Se<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula>. We show the influence of various magnetic and nonmagnetic chemical defects on the twin plane formation energy and discuss the related modification of their distribution. Furthermore, we examine the change of the dopants’ magnetic properties at sites in the vicinity of a twin plane, and the dopants’ preference to occupy such sites. Our results suggest that twin planes repel each other at least over a vertical distance of 3–4 nm. However, in the presence of magnetic Mn or Fe defects, a close twin plane placement is preferred. Furthermore, calculated twin plane formation energies indicate that in this situation their formation becomes suppressed. Finally, we discuss the influence of twin planes on the surface band gap.https://www.mdpi.com/2079-4991/10/10/2059topological insulatorsmagnetic dopingdefectsab initio |
| spellingShingle | Jakub Šebesta Karel Carva Dominik Kriegner Jan Honolka Twin Domain Structure in Magnetically Doped Bi<sub>2</sub>Se<sub>3</sub> Topological Insulator topological insulators magnetic doping defects ab initio |
| title | Twin Domain Structure in Magnetically Doped Bi<sub>2</sub>Se<sub>3</sub> Topological Insulator |
| title_full | Twin Domain Structure in Magnetically Doped Bi<sub>2</sub>Se<sub>3</sub> Topological Insulator |
| title_fullStr | Twin Domain Structure in Magnetically Doped Bi<sub>2</sub>Se<sub>3</sub> Topological Insulator |
| title_full_unstemmed | Twin Domain Structure in Magnetically Doped Bi<sub>2</sub>Se<sub>3</sub> Topological Insulator |
| title_short | Twin Domain Structure in Magnetically Doped Bi<sub>2</sub>Se<sub>3</sub> Topological Insulator |
| title_sort | twin domain structure in magnetically doped bi sub 2 sub se sub 3 sub topological insulator |
| topic | topological insulators magnetic doping defects ab initio |
| url | https://www.mdpi.com/2079-4991/10/10/2059 |
| work_keys_str_mv | AT jakubsebesta twindomainstructureinmagneticallydopedbisub2subsesub3subtopologicalinsulator AT karelcarva twindomainstructureinmagneticallydopedbisub2subsesub3subtopologicalinsulator AT dominikkriegner twindomainstructureinmagneticallydopedbisub2subsesub3subtopologicalinsulator AT janhonolka twindomainstructureinmagneticallydopedbisub2subsesub3subtopologicalinsulator |
