Twin Domain Structure in Magnetically Doped Bi<sub>2</sub>Se<sub>3</sub> Topological Insulator

Twin domains are naturally present in the topological insulator Bi<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>Se<inline-formula><ma...

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Published in:Nanomaterials
Main Authors: Jakub Šebesta, Karel Carva, Dominik Kriegner, Jan Honolka
Format: Article
Language:English
Published: MDPI AG 2020-10-01
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Online Access:https://www.mdpi.com/2079-4991/10/10/2059
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author Jakub Šebesta
Karel Carva
Dominik Kriegner
Jan Honolka
author_facet Jakub Šebesta
Karel Carva
Dominik Kriegner
Jan Honolka
author_sort Jakub Šebesta
collection DOAJ
container_title Nanomaterials
description Twin domains are naturally present in the topological insulator Bi<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>Se<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula> and strongly affect its properties. While studies of their behavior in an otherwise ideal Bi<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>Se<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula> structure exist, little is known about their possible interaction with other defects. Extra information is needed, especially for the case of an artificial perturbation of topological insulator states by magnetic doping, which has attracted a lot of attention recently. Employing ab initio calculations based on a layered Green’s function formalism, we study the interaction between twin planes in Bi<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>Se<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula>. We show the influence of various magnetic and nonmagnetic chemical defects on the twin plane formation energy and discuss the related modification of their distribution. Furthermore, we examine the change of the dopants’ magnetic properties at sites in the vicinity of a twin plane, and the dopants’ preference to occupy such sites. Our results suggest that twin planes repel each other at least over a vertical distance of 3–4 nm. However, in the presence of magnetic Mn or Fe defects, a close twin plane placement is preferred. Furthermore, calculated twin plane formation energies indicate that in this situation their formation becomes suppressed. Finally, we discuss the influence of twin planes on the surface band gap.
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spelling doaj-art-bef17aa22a304a9aa22c2eb0803d5d7e2025-08-19T23:27:36ZengMDPI AGNanomaterials2079-49912020-10-011010205910.3390/nano10102059Twin Domain Structure in Magnetically Doped Bi<sub>2</sub>Se<sub>3</sub> Topological InsulatorJakub Šebesta0Karel Carva1Dominik Kriegner2Jan Honolka3Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121 16 Praha 2, Czech RepublicDepartment of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121 16 Praha 2, Czech RepublicInstitute of Physics, Academy of Science of the Czech Republic, Na Slovance 2, 182 21 Praha 8, Czech RepublicInstitute of Physics, Academy of Science of the Czech Republic, Na Slovance 2, 182 21 Praha 8, Czech RepublicTwin domains are naturally present in the topological insulator Bi<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>Se<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula> and strongly affect its properties. While studies of their behavior in an otherwise ideal Bi<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>Se<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula> structure exist, little is known about their possible interaction with other defects. Extra information is needed, especially for the case of an artificial perturbation of topological insulator states by magnetic doping, which has attracted a lot of attention recently. Employing ab initio calculations based on a layered Green’s function formalism, we study the interaction between twin planes in Bi<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>Se<inline-formula><math display="inline"><semantics><msub><mrow></mrow><mn>3</mn></msub></semantics></math></inline-formula>. We show the influence of various magnetic and nonmagnetic chemical defects on the twin plane formation energy and discuss the related modification of their distribution. Furthermore, we examine the change of the dopants’ magnetic properties at sites in the vicinity of a twin plane, and the dopants’ preference to occupy such sites. Our results suggest that twin planes repel each other at least over a vertical distance of 3–4 nm. However, in the presence of magnetic Mn or Fe defects, a close twin plane placement is preferred. Furthermore, calculated twin plane formation energies indicate that in this situation their formation becomes suppressed. Finally, we discuss the influence of twin planes on the surface band gap.https://www.mdpi.com/2079-4991/10/10/2059topological insulatorsmagnetic dopingdefectsab initio
spellingShingle Jakub Šebesta
Karel Carva
Dominik Kriegner
Jan Honolka
Twin Domain Structure in Magnetically Doped Bi<sub>2</sub>Se<sub>3</sub> Topological Insulator
topological insulators
magnetic doping
defects
ab initio
title Twin Domain Structure in Magnetically Doped Bi<sub>2</sub>Se<sub>3</sub> Topological Insulator
title_full Twin Domain Structure in Magnetically Doped Bi<sub>2</sub>Se<sub>3</sub> Topological Insulator
title_fullStr Twin Domain Structure in Magnetically Doped Bi<sub>2</sub>Se<sub>3</sub> Topological Insulator
title_full_unstemmed Twin Domain Structure in Magnetically Doped Bi<sub>2</sub>Se<sub>3</sub> Topological Insulator
title_short Twin Domain Structure in Magnetically Doped Bi<sub>2</sub>Se<sub>3</sub> Topological Insulator
title_sort twin domain structure in magnetically doped bi sub 2 sub se sub 3 sub topological insulator
topic topological insulators
magnetic doping
defects
ab initio
url https://www.mdpi.com/2079-4991/10/10/2059
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AT karelcarva twindomainstructureinmagneticallydopedbisub2subsesub3subtopologicalinsulator
AT dominikkriegner twindomainstructureinmagneticallydopedbisub2subsesub3subtopologicalinsulator
AT janhonolka twindomainstructureinmagneticallydopedbisub2subsesub3subtopologicalinsulator