Excellent Bipolar Resistive Switching Characteristics of Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> Thin Films Prepared via Sol-Gel Process

Herein, Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> (BIT) ferroelectric thin films were fabricated into Au/BIT/LaNiO<sub>3</sub>/Si structures to demonstrate their memristor properties. Repeatable and stable bipolar resistive switching (RS) characterist...

書目詳細資料
發表在:	Nanomaterials
Main Authors:	He-Chun Zhou, Yan-Ping Jiang, Xin-Gui Tang, Qiu-Xiang Liu, Wen-Hua Li, Zhen-Hua Tang
格式:	Article
語言:	英语
出版:	MDPI AG 2021-10-01
主題:	Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> resistive switching oxygen vacancies conductive filaments thin film
在線閱讀:	https://www.mdpi.com/2079-4991/11/10/2705

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