Argon irradiation effects on the structural and optical properties of reactively sputtered CrN films
The present study deals with CrN films irradiated at room temperature (RT) with 200 keV Ar+ ions. The CrN layers were deposited by d.c. reactive sputtering on Si (100) wafers, at nitrogen partial pressure of 5×10-4 mbar, to a total thickness of 280 nm. The substrates were held at 150ºC duri...
| 出版年: | Science of Sintering |
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| 主要な著者: | , , |
| フォーマット: | 論文 |
| 言語: | 英語 |
| 出版事項: |
International Institute for the Science of Sintering, Beograd
2015-01-01
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| 主題: | |
| オンライン･アクセス: | http://www.doiserbia.nb.rs/img/doi/0350-820X/2015/0350-820X1502187N.pdf |
| 要約: | The present study deals with CrN films irradiated at room temperature (RT)
with 200 keV Ar+ ions. The CrN layers were deposited by d.c. reactive
sputtering on Si (100) wafers, at nitrogen partial pressure of 5×10-4 mbar,
to a total thickness of 280 nm. The substrates were held at 150ºC during
deposition. After deposition the CrN layers were irradiated with 200 keV Ar+
ions to the fluences of 5×1015 - 2×1016 ions/cm2. Structural characterization
was performed with Rutherford backscattering spectroscopy (RBS),
cross-sectional transmission electron microscopy (XTEM) and X-ray diffraction
(XRD). Spectroscopic ellipsometry measurements were carried out in order to
study optical properties of the samples. The irradiations caused the
microstructrual changes in CrN layers, but no amorphization even at the
highest argon fluence of 2×1016 ions/cm2. Observed changes in microstructure
were correlated with the variation in optical parameters. It was found that
both refractive index and extinction coefficient are strongly dependent on
the defect concentration in CrN layers. [Projekat Ministarstva nauke
Republike Srbije, br. III 45005] |
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| ISSN: | 0350-820X 1820-7413 |