Optical and electrical properties of proton-implanted p-GaSb for electrical isolation

The effect of proton implantation as isolation implant and subsequent annealing on the optical absorption and electrical resistivity of low-bandgap p -GaSb is reported. The measured transmittance spectra indicates that implantation creates a distribution of energy levels extending into the bandgap....

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Bibliographic Details
Published in:	Applied Physics Express
Main Authors:	Sk Shafaat Saud Nikor, Md Saiful Islam Sumon, Shrivatch Sankar, Like Ma, Victor J. Patel, Samuel D. Hawkins, Sadhvikas J. Addamane, Shamsul Arafin
Format:	Article
Language:	English
Published:	IOP Publishing 2024-01-01
Subjects:	ion implantation implant isolation rapid thermal annealing gallium antimonide spectroscopy
Online Access:	https://doi.org/10.35848/1882-0786/ad9377

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