Crystallinity-Controlled Atomic Layer Deposition of Ti-Doped ZrO2 Thin Films

• Published in: ECS Advances
• Main Authors: Seokhwi Song, Eungju Kim, Kyunghoo Kim, Jangho Bae, Jinho Lee, Chang Hwa Jung, Hanjin Lim, Hyeongtag Jeon
• Format: Article
• Language: English
• Published: IOP Publishing 2024-01-01
• Subjects: dielectrics - high-k; atomic layer deposition; X-ray diffraction
• Online Access: https://doi.org/10.1149/2754-2734/ad1a75
• ISSN: 2754-2734

We investigated Ti-doped ZrO _2 deposition using a cyclopentadienyl tris(dimethylamino) zirconium (CpZr(NMe _2 ) _3 ) precursor and a titanium tetraisopropoxide (TTIP) precursor using an O _3 thermal atomic layer deposition process. In addition, the effect of Ti doping concentration on the chemical bonding and electrical properties of the Ti-doped ZrO _2 thin films was studied. O _3 was used at a high concentration of 400 g m ^−3 . We varied the Ti doping concentration by controlling the rate of the supercycle process in the ZrO _2 process window of 200 °C–300 °C. As a result, the highest dielectric constant was observed at a Ti doping concentration of 2.5% because it enhances the crystallinity of ZrO. Excessive Ti doping hinders crystal formation.