The Method of Bandwidth Extension of SiGe BiCMOS Microwave Variable-Gain Amplifier Integrated Circuit

• Published in: Vìsnik Nacìonalʹnogo Tehnìčnogo Unìversitetu Ukraïni Kììvsʹkij Polìtehnìčnij Ìnstitut: Serìâ Radìotehnìka, Radìoaparatobuduvannâ
• Main Authors: E. M. Savchenko, A. S. Budiakov, P. S. Budiakov, N. N. Prokopenko
• Format: Article
• Language: English
• Published: Igor Sikorsky Kyiv Polytechnic Institute 2017-06-01
• Subjects: variable-gain amplifier; "folded" casсode; operational amplifier; SiGe BiCMOS technology; R-2R matrix; cancellation
• Online Access: http://doi.radap.kpi.ua/article/view/221600

The article proposes a method of bandwidth extension of the analog integrated circuit of the variable-gain amplifier (VGA) based on SiGe BiCMOS technology with the rules of 0.18 µm. The designed VGA has a linear (in dB) control characteristic. The authors consider the VGA architecture and present its design outputs. They describe the properties of two modifications of the VGA integrated circuit – with classical correction of the response and with the circuit of the parasitic capacitance cancellation in the high-impedance node. The article shows that the second circuit solution allows increasing the upper frequency limit of the VGA by a factor of 1.8-2.