A Review of Wide Bandgap Semiconductors: Insights into SiC, IGZO, and Their Defect Characteristics

• Published in: Nanomaterials
• Main Authors: Qiwei Shangguan, Yawei Lv, Changzhong Jiang
• Format: Article
• Language: English
• Published: MDPI AG 2024-10-01
• Subjects: a-IGZO; 4H-SiC; defects; charge transition levels; formation energy; stability
• Online Access: https://www.mdpi.com/2079-4991/14/20/1679

Although the irreplaceable position of silicon (Si) semiconductor materials in the field of information has become a consensus, new materials continue to be sought to expand the application range of semiconductor devices. Among them, research on wide bandgap semiconductors has already achieved preliminary success, and the relevant achievements have been applied in the fields of energy conversion, display, and storage. However, similar to the history of Si, the immature material grown and device manufacturing processes at the current stage seriously hinder the popularization of wide bandgap semiconductor-based applications, and one of the crucial issues behind this is the defect problem. Here, we take amorphous indium gallium zinc oxide (a-IGZO) and 4H silicon carbide (4H-SiC) as two representatives to discuss physical/mechanical properties, electrical performance, and stability from the perspective of defects. Relevant experimental and theoretical works on defect formation, evolution, and annihilation are summarized, and the impacts on carrier transport behaviors are highlighted. State-of-the-art applications using the two materials are also briefly reviewed. This review aims to assist researchers in elucidating the complex impacts of defects on electrical behaviors of wide bandgap semiconductors, enabling them to make judgments on potential defect issues that may arise in their own processes. It aims to contribute to the effort of using various post-treatment methods to control defect behaviors and achieve the desired material and device performance.