Investigation of photoluminescence spectrums of InSb low-dimensional structures formed in GaSb matrix
Results of investigation of photoluminescence spectrums of the epitaxial structures containing InSb low-dimensional structures formed in GaSb matrix by a method of pulse cooling of saturated solution-melt are presented. It is shown, that observable photoluminescence bands are concerned with radiatio...
| Published in: | Технологія та конструювання в електронній апаратурі |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Politekhperiodika
2011-10-01
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| Subjects: | |
| Online Access: | https://tkea.com.ua/index.php/journal/article/view/498 |
| _version_ | 1848757280515817472 |
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| author | E. V. Andronova Ye. A. Baganov V. V. Kurak |
| author_facet | E. V. Andronova Ye. A. Baganov V. V. Kurak |
| author_sort | E. V. Andronova |
| collection | DOAJ |
| container_title | Технологія та конструювання в електронній апаратурі |
| description | Results of investigation of photoluminescence spectrums of the epitaxial structures containing InSb low-dimensional structures formed in GaSb matrix by a method of pulse cooling of saturated solution-melt are presented. It is shown, that observable photoluminescence bands are concerned with radiation transitions through energy levels of InSb low-dimensional structures formed on InSb wetting layer with thickness of 2 nm. |
| format | Article |
| id | doaj-art-e0b3f3ea9aed4c71a02788e49ccaf3db |
| institution | Directory of Open Access Journals |
| issn | 3083-6530 3083-6549 |
| language | English |
| publishDate | 2011-10-01 |
| publisher | Politekhperiodika |
| record_format | Article |
| spelling | doaj-art-e0b3f3ea9aed4c71a02788e49ccaf3db2025-10-15T20:05:42ZengPolitekhperiodikaТехнологія та конструювання в електронній апаратурі3083-65303083-65492011-10-0153538498Investigation of photoluminescence spectrums of InSb low-dimensional structures formed in GaSb matrixE. V. Andronova0Ye. A. Baganov1V. V. Kurak2Kherson National Technical University, Kherson, UkraineKherson National Technical University, Kherson, UkraineKherson National Technical University, Kherson, UkraineResults of investigation of photoluminescence spectrums of the epitaxial structures containing InSb low-dimensional structures formed in GaSb matrix by a method of pulse cooling of saturated solution-melt are presented. It is shown, that observable photoluminescence bands are concerned with radiation transitions through energy levels of InSb low-dimensional structures formed on InSb wetting layer with thickness of 2 nm.https://tkea.com.ua/index.php/journal/article/view/498low-dimensional structuresindium antimonidegallium antimonideliquid phase epitaxyphotoluminescence spectrumradiative transition |
| spellingShingle | E. V. Andronova Ye. A. Baganov V. V. Kurak Investigation of photoluminescence spectrums of InSb low-dimensional structures formed in GaSb matrix low-dimensional structures indium antimonide gallium antimonide liquid phase epitaxy photoluminescence spectrum radiative transition |
| title | Investigation of photoluminescence spectrums of InSb low-dimensional structures formed in GaSb matrix |
| title_full | Investigation of photoluminescence spectrums of InSb low-dimensional structures formed in GaSb matrix |
| title_fullStr | Investigation of photoluminescence spectrums of InSb low-dimensional structures formed in GaSb matrix |
| title_full_unstemmed | Investigation of photoluminescence spectrums of InSb low-dimensional structures formed in GaSb matrix |
| title_short | Investigation of photoluminescence spectrums of InSb low-dimensional structures formed in GaSb matrix |
| title_sort | investigation of photoluminescence spectrums of insb low dimensional structures formed in gasb matrix |
| topic | low-dimensional structures indium antimonide gallium antimonide liquid phase epitaxy photoluminescence spectrum radiative transition |
| url | https://tkea.com.ua/index.php/journal/article/view/498 |
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