SiC-MOSFET or Si-IGBT: Comparison of Design and Key Characteristics of a 690 V Grid-Tied Industrial Two-Level Voltage Source Converter

• Published in: Energies
• Main Authors: Carlos D. Fuentes, Marcus Müller, Steffen Bernet, Samir Kouro
• Format: Article
• Language: English
• Published: MDPI AG 2021-05-01
• Subjects: 2L-VSC; AFE; SiC-MOSFET; Si-IGBT; converter design; converter assessment
• Online Access: https://www.mdpi.com/1996-1073/14/11/3054

In this paper, a design driven comparison between two 190 kVA industrial three-phase two-level voltage source converter (2L-VSC) designs based in silicon carbide (SiC) and silicon (Si) for 690 V grids is presented. These two designs were conceived to have the same nominal power, while switching at reasonable switching speeds and requiring the same case to ambient thermal impedance. Under these conditions, the designs were studied to detect the potential gains and limitations that a pragmatic converter design could feature when using these two technologies regarding cost, efficiency, size and weight. To achieve this, experimentally determined semiconductor characteristics were used to perform simulations, the results of which were then used to design the essential parts of the converter. These designed parts were then corroborated with manufacturers, from which physical characteristics of all designed components were obtained. The results show that the SiC based design presents substantial weight savings and an 11% system cost reduction, while preserving its traditional characteristics such as improved overall efficiency when compared to the silicon based design under the given design requirements and constraints.