Magnetic anisotropies in epitaxial Fe3O4/GaAs(100) patterned structures

Previous studies on epitaxial Fe3O4 rings in the context of spin-transfer torque effect have revealed complicated and undesirable domain structures, attributed to the intrinsic fourfold magnetocrystalline anisotropy in the ferrite. In this Letter, we report a viable solution to this problem, utilizi...

Full description

Bibliographic Details
Published in:	AIP Advances
Main Authors:	W. Zhang, P. K. J. Wong, D. Zhang, S. J. Yuan, Z. C. Huang, Y. Zhai, J. Wu, Y. B. Xu
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2014-10-01
Online Access:	http://dx.doi.org/10.1063/1.4897963

Similar Items

Interface-induced spiral magnetic structure of epitaxial Fe films on GaAs(001)
by: Cunxu Gao, et al.
Published: (2018-12-01)

Radiation Resistance of Epitaxial Structures Based on GaAs
by: E. N. Vigdorovich
Published: (2019-06-01)

The Growth and Assessment of GaAs Epitaxial Layers Obtained From Ga-As-Bi Solutions
by: J. Kozlowski, et al.
Published: (1987-01-01)

GaAs Molecular Beam Epitaxy on (110)-Oriented Substrates
by: Evgeniy Klimov, et al.
Published: (2022-12-01)

Photosensitive AlGaAs / GaAs Structures Grown by Molecular Beam Epitaxy
by: M.A. Bazalevsky, et al.
Published: (2014-07-01)

Thermal transport properties in GaAs (110)/GaAs (100) and GaAs/InAs interfaces by Reverse Non-equilibrium Molecular Dynamics
by: O.N. Nenuwe, et al.
Published: (2019-11-01)

Epitaxial nanowire formation in metamorphic GaAs/GaPAs short-period superlattices
by: Nan Zheng, et al.
Published: (2017-07-01)

Transfer of magnetic anisotropy in epitaxial Co/NiO/Fe trilayers
by: M. Szpytma, et al.
Published: (2024-01-01)

Lead Catalyzed GaAs Nanowires Grown by Molecular Beam Epitaxy
by: Igor V. Shtrom, et al.
Published: (2024-11-01)

Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures
by: V. Orejuela, et al.
Published: (2024-09-01)

Photosensitivity of MESFETs on Epitaxy Layers of GaAs with Monocrystalline Silicon Wafer
by: S. Novosyadly, et al.
Published: (2020-01-01)

Epitaxial GaAs and pHEMT on aluminum-transformed AlAs nanofilms
by: Chia-Chu Cheng, et al.
Published: (2018-09-01)

Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment
by: Tchernycheva M, et al.
Published: (2010-01-01)

Giant four-fold magnetic anisotropy in nanotwinned NiMnGa epitaxial films
by: Pavlo V. Bondarenko, et al.
Published: (2023-12-01)

Sharp interfaces in p+-AlGaAs/n-GaAs epitaxial structures obtained by MOCVD
by: N. M. Vakiv, et al.
Published: (2014-06-01)

Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy
by: D. Benyahia, et al.
Published: (2018-07-01)

Nucleation and Growth of GaAs on a Carbon Release Layer by Halide Vapor Phase Epitaxy
by: Dennice M. Roberts, et al.
Published: (2023-11-01)

Migration-Enhanced Epitaxial Growth of InAs/GaAs Short-Period Superlattices for THz Generation
by: Ruolin Chen, et al.
Published: (2024-01-01)

GaAs Triac-like Triangular Barrier Switch Prepared by Molecular Beam Epitaxy
by: M. R. Lef, et al.
Published: (2001-01-01)

Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy
by: Fedorov A, et al.
Published: (2010-01-01)

Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study
by: Monica Bollani, et al.
Published: (2020-01-01)

Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates
by: Shafi M, et al.
Published: (2010-01-01)

Temporal stability and absolute composition issues in molecular beam epitaxy of AlGaAs/GaAs THz QCL
by: Vasil’evskii I. S., et al.
Published: (2018-01-01)

Initial Optimization of the Growth Conditions of GaAs Homo-Epitaxial Layers after Cleaning and Restarting the Molecular Beam Epitaxy Reactor
by: Dawid Jarosz, et al.
Published: (2023-08-01)

Electric field dependence of the spin relaxation anisotropy in (111) GaAs/AlGaAs quantum wells
by: A Balocchi, et al.
Published: (2013-01-01)

Structural Evolution During Formation and Filling of Self-patterned Nanoholes on GaAs (100) Surfaces
by: Zhou Lin, et al.
Published: (2008-01-01)

Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers
by: Johannes Strassner, et al.
Published: (2021-01-01)

Various Quantum- and Nano-Structures by III–V Droplet Epitaxy on GaAs Substrates
by: Wang Zh, et al.
Published: (2009-01-01)

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers
by: Kun Cheng, et al.
Published: (2024-03-01)

Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy
by: Lin Sheng-Di, et al.
Published: (2011-01-01)

Performance Enhancement of Planar GaAs Photoconductive Semiconductor Switches by Introducing p-Type Epitaxial Layer
by: Jiawei Zong, et al.
Published: (2025-02-01)

Anisotropy of spin–orbit induced electron spin relaxation in [001] and [111] grown GaAs quantum dots
by: C Segarra, et al.
Published: (2015-01-01)

Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
by: Calbi Gunder, et al.
Published: (2024-05-01)

The algorithmic programs for optimal growth conditions selection in growing of GaAs-based epitaxial layers by MOCVD.
by: A. A. Marmalyuk, et al.
Published: (2009-04-01)

Tunable interplay between exchange coupling and uniaxial magnetic anisotropy in epitaxial CoO/Au/Fe trilayers
by: H. Nayyef, et al.
Published: (2023-07-01)

Optical and Magnetic Response by Design in GaAs Quantum Dots
by: Christian Schimpf, et al.
Published: (2025-10-01)

Sb-segregated GaInNAs/GaAs(Sb) triple quantum well core–multishell nanowires grown by molecular beam epitaxy
by: Takuto Goto, et al.
Published: (2025-01-01)

Corroborating the magnetic easy axis of epitaxial (100) α-iron and (0001) BaFe12O19 thin films by 57Fe Mössbauer spectroscopy
by: Y. E. Li, et al.
Published: (2025-01-01)

Ultra-High-Speed Growth of GaAs Solar Cells by Triple-Chamber Hydride Vapor Phase Epitaxy
by: Ryuji Oshima, et al.
Published: (2023-02-01)

Unintentional Fe incorporation in the homo-epitaxy of GaN on Fe-doped freestanding GaN substrate
by: Songyuan Xia, et al.
Published: (2025-01-01)