Dopant Diffusion‐Induced Dielectric Breakdown: Stacked Dielectric Reliability on Heavily Doped Polysilicon

Abstract This study identifies a novel failure mode in silicon dioxide/silicon nitride (SiO₂/Si₃N₄) capacitors caused by dopant diffusion in heavily doped polysilicon substrates. Under identical thermal oxidation conditions, the interfacial oxide layer is significantly thinner on p type polysilicon...

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Bibliographic Details
Published in:	Advanced Electronic Materials
Main Authors:	Shuo Wang, Zebin Kong, Jie Zhao, Shukai Guan, Ranran Zhao, Anan Ju, Kunshu Wang, Pengfei Lian
Format:	Article
Language:	English
Published:	Wiley-VCH 2025-08-01
Subjects:	dopant diffusion failure analysis (FA) heavily doped polysilicon oxidation stacked dielectric reliability TDDB
Online Access:	https://doi.org/10.1002/aelm.202500046

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