Temperature-Dependent Electrical Characteristics and Low-Frequency Noise Analysis of AlGaN/GaN HEMTs

In this paper, we investigate the electrical characteristics of AlGaN/GaN HEMTs at the lowest temperature of 20 K. The measurement results indicate that the output current of the device decreases significantly with increasing temperature at temperature ranging from 40 K to 260 K, and the saturation...

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Bibliographic Details
Published in:	IEEE Journal of the Electron Devices Society
Main Authors:	Qiang Chen, Y. Q. Chen, Chang Liu, Zhiyuan He, Yuan Chen, K. W. Geng, Y. J. He, W. Y. Chen
Format:	Article
Language:	English
Published:	IEEE 2024-01-01
Subjects:	Low temperature AlGaN/GaN HEMTs LFN traps
Online Access:	https://ieeexplore.ieee.org/document/10643171/

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