High-Sensitivity pH Sensor Based on Coplanar Gate AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor

The sensitivity of conventional ion-sensitive field-effect transistors is limited to the Nernst limit (59.14 mV/pH). In this study, we developed a pH sensor platform based on a coplanar gate AlGaN/GaN metal-oxide-semiconductor (MOS) high electron mobility transistor (HEMT) using the resistive coupli...

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Bibliographic Details
Published in:	Chemosensors
Main Authors:	Seong-Kun Cho, Won-Ju Cho
Format:	Article
Language:	English
Published:	MDPI AG 2021-02-01
Subjects:	AlGaN/GaN MOS HEMT coplanar gate resistive coupling pH sensor
Online Access:	https://www.mdpi.com/2227-9040/9/3/42

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