Atomic-level polarization reversal in sliding ferroelectric semiconductors
Abstract Intriguing “slidetronics” has been reported in van der Waals (vdW) layered non-centrosymmetric materials and newly-emerging artificially-tuned twisted moiré superlattices, but correlative experiments that spatially track the interlayer sliding dynamics at atomic-level remain elusive. Here,...
| الحاوية / القاعدة: | Nature Communications |
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| المؤلفون الرئيسيون: | , , , , , , , , , , , , , , |
| التنسيق: | مقال |
| اللغة: | الإنجليزية |
| منشور في: |
Nature Portfolio
2024-05-01
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| الوصول للمادة أونلاين: | https://doi.org/10.1038/s41467-024-48218-z |
| _version_ | 1850358978859499520 |
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| author | Fengrui Sui Haoyang Li Ruijuan Qi Min Jin Zhiwei Lv Menghao Wu Xuechao Liu Yufan Zheng Beituo Liu Rui Ge Yu-Ning Wu Rong Huang Fangyu Yue Junhao Chu Chungang Duan |
| author_facet | Fengrui Sui Haoyang Li Ruijuan Qi Min Jin Zhiwei Lv Menghao Wu Xuechao Liu Yufan Zheng Beituo Liu Rui Ge Yu-Ning Wu Rong Huang Fangyu Yue Junhao Chu Chungang Duan |
| author_sort | Fengrui Sui |
| collection | DOAJ |
| container_title | Nature Communications |
| description | Abstract Intriguing “slidetronics” has been reported in van der Waals (vdW) layered non-centrosymmetric materials and newly-emerging artificially-tuned twisted moiré superlattices, but correlative experiments that spatially track the interlayer sliding dynamics at atomic-level remain elusive. Here, we address the decisive challenge to in-situ trace the atomic-level interlayer sliding and the induced polarization reversal in vdW-layered yttrium-doped γ-InSe, step by step and atom by atom. We directly observe the real-time interlayer sliding by a 1/3-unit cell along the armchair direction, corresponding to vertical polarization reversal. The sliding driven only by low energetic electron-beam illumination suggests rather low switching barriers. Additionally, we propose a new sliding mechanism that supports the observed reversal pathway, i.e., two bilayer units slide towards each other simultaneously. Our insights into the polarization reversal via the atomic-scale interlayer sliding provide a momentous initial progress for the ongoing and future research on sliding ferroelectrics towards non-volatile storages or ferroelectric field-effect transistors. |
| format | Article |
| id | doaj-art-e4faeeff1b5e4a73b543db04a1610eed |
| institution | Directory of Open Access Journals |
| issn | 2041-1723 |
| language | English |
| publishDate | 2024-05-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| spelling | doaj-art-e4faeeff1b5e4a73b543db04a1610eed2025-08-19T23:06:10ZengNature PortfolioNature Communications2041-17232024-05-011511810.1038/s41467-024-48218-zAtomic-level polarization reversal in sliding ferroelectric semiconductorsFengrui Sui0Haoyang Li1Ruijuan Qi2Min Jin3Zhiwei Lv4Menghao Wu5Xuechao Liu6Yufan Zheng7Beituo Liu8Rui Ge9Yu-Ning Wu10Rong Huang11Fangyu Yue12Junhao Chu13Chungang Duan14Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal UniversityKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal UniversityKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal UniversityCollege of Materials, Shanghai Dianji UniversityKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal UniversitySchool of Physics, Huazhong University of Science and TechnologyShanghai Institute of Ceramics, Chinese Academy of SciencesKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal UniversityKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal UniversityKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal UniversityKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal UniversityKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal UniversityKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal UniversityKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal UniversityKey Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal UniversityAbstract Intriguing “slidetronics” has been reported in van der Waals (vdW) layered non-centrosymmetric materials and newly-emerging artificially-tuned twisted moiré superlattices, but correlative experiments that spatially track the interlayer sliding dynamics at atomic-level remain elusive. Here, we address the decisive challenge to in-situ trace the atomic-level interlayer sliding and the induced polarization reversal in vdW-layered yttrium-doped γ-InSe, step by step and atom by atom. We directly observe the real-time interlayer sliding by a 1/3-unit cell along the armchair direction, corresponding to vertical polarization reversal. The sliding driven only by low energetic electron-beam illumination suggests rather low switching barriers. Additionally, we propose a new sliding mechanism that supports the observed reversal pathway, i.e., two bilayer units slide towards each other simultaneously. Our insights into the polarization reversal via the atomic-scale interlayer sliding provide a momentous initial progress for the ongoing and future research on sliding ferroelectrics towards non-volatile storages or ferroelectric field-effect transistors.https://doi.org/10.1038/s41467-024-48218-z |
| spellingShingle | Fengrui Sui Haoyang Li Ruijuan Qi Min Jin Zhiwei Lv Menghao Wu Xuechao Liu Yufan Zheng Beituo Liu Rui Ge Yu-Ning Wu Rong Huang Fangyu Yue Junhao Chu Chungang Duan Atomic-level polarization reversal in sliding ferroelectric semiconductors |
| title | Atomic-level polarization reversal in sliding ferroelectric semiconductors |
| title_full | Atomic-level polarization reversal in sliding ferroelectric semiconductors |
| title_fullStr | Atomic-level polarization reversal in sliding ferroelectric semiconductors |
| title_full_unstemmed | Atomic-level polarization reversal in sliding ferroelectric semiconductors |
| title_short | Atomic-level polarization reversal in sliding ferroelectric semiconductors |
| title_sort | atomic level polarization reversal in sliding ferroelectric semiconductors |
| url | https://doi.org/10.1038/s41467-024-48218-z |
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