True Random Number Generator Based on the Variability of the High Resistance State of RRAMs

• Published in: IEEE Access
• Main Authors: Maryam Akbari, Sattar Mirzakuchaki, Daniel Arumi, Salvador Manich, Alvaro Gomez-Pau, Francesca Campabadal, Mireia Bargallo Gonzalez, Rosa Rodriguez-Montanes
• Format: Article
• Language: English
• Published: IEEE 2023-01-01
• Subjects: True random number generator (TRNG); resistive random access memory (RRAM); RRAM based TRNG
• Online Access: https://ieeexplore.ieee.org/document/10168114/

Hardware-based security primitives like True Random Number Generators (TRNG) have become a crucial part in protecting data over communication channels. With the growth of internet and cloud storage, TRNGs are required in numerous cryptographic operations. On the other hand, the inherently dense structure and low power characteristics of emerging nanoelectronic technologies such as resistive-switching memories (RRAM) make them suitable elements in designing hardware security modules integrated in CMOS ICs. In this paper, a memristor based TRNG is presented by leveraging the high stochasticity of RRAM resistance value in OFF (High Resistive) state. In the proposal, one or two devices can be used depending on whether the objective is focused on saving area or obtaining a higher random bit frequency generation. The generated bits, based on a combination of experimental measurements and SPICE simulations, passed all 15 National Institute of Standards and Technology (NIST) tests and achieved a throughput of tens of MHz.