Non-radiative Auger Current in a InGaN/GaN Multiple Quantum Well Laser Diode under Hydrostatic Pressure and Temperature

Abstract: This study employs a numerical model to analyze the non-radiative Auger current in c-plane InGaN/GaN multiple-quantum-well laser diodes (MQWLD) under hydrostatic pressure and temperature. Finite difference methods (FDMs) were used to acquire energy eigenvalues and their corresponding eigen...

وصف كامل

التفاصيل البيبلوغرافية
الحاوية / القاعدة:	Journal of Optoelectronical Nanostructures
المؤلفون الرئيسيون:	Rajab Yahyazadeh, Zahra Hashempour
التنسيق:	مقال
اللغة:	الإنجليزية
منشور في:	Islamic Azad University, Marvdasht Branch 2023-05-01
الموضوعات:	auger current overlap integrals laser diodes multi-quantum well
الوصول للمادة أونلاين:	https://jopn.marvdasht.iau.ir/article_6029_8257d02b231ec291971c655df6182424.pdf

مواد مشابهة

Effect of Hydrostatic Pressure on Optical Absorption Coefficient of InGaN/GaN of Multiple Quantum Well Solar Cells
حسب: Rajab yahyazadeh, وآخرون
منشور في: (2021-05-01)

Reverse Leakage Current Characteristics of GaN/InGaN Multiple Quantum-Wells Blue and Green Light-Emitting Diodes
حسب: Ting Zhi, وآخرون
منشور في: (2016-01-01)

Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes
حسب: Jing Yang, وآخرون
منشور في: (2017-01-01)

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes
حسب: Liwen Cheng, وآخرون
منشور في: (2021-08-01)

Impact of Generation and Relocation of Defects on Optical Degradation of Multi-Quantum-Well InGaN/GaN-Based Light-Emitting Diode
حسب: Claudia Casu, وآخرون
منشور في: (2022-08-01)

Numerical Modeling of Electronic and Electrical Characteristics of 0.3 0.7 Al Ga N / GaN Multiple Quantum Well Solar Cells
حسب: Rajab yahyazadeh, وآخرون
منشور في: (2020-08-01)

Oscillations in Absorption from InGaN/GaN Quantum Well to Continuum
حسب: Marta Gładysiewicz-Kudrawiec, وآخرون
منشور في: (2025-01-01)

Experimental and Modeling Investigations of Miniaturization in InGaN/GaN Light-Emitting Diodes and Performance Enhancement by Micro-Wall Architecture
حسب: Yiping Zhang, وآخرون
منشور في: (2021-01-01)

Effect of quantum barrier width and quantum resonant tunneling through InGaN/GaN parabolic quantum well-LED structure on LED efficiency
حسب: Hind Althib
منشور في: (2021-03-01)

On-chip warped three-dimensional InGaN/GaN quantum well diode with transceiver coexistence characters
حسب: Feifei Qin, وآخرون
منشور في: (2024-12-01)

Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes
حسب: Steffan Gwyn, وآخرون
منشور في: (2021-01-01)

Three-Dimensional Numerical Study on the Efficiency Droop in InGaN/GaN Light-Emitting Diodes
حسب: Quoc-Hung Pham, وآخرون
منشور في: (2019-01-01)

Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities
حسب: Artem Bercha, وآخرون
منشور في: (2025-01-01)

Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers
حسب: Jing Yang, وآخرون
منشور في: (2018-01-01)

Hexagonal Boron Nitride Passivation Layer for Improving the Performance and Reliability of InGaN/GaN Light-Emitting Diodes
حسب: Gun-Hee Lee, وآخرون
منشور في: (2021-10-01)

Enhanced Optoelectronic Performance of Yellow Light-Emitting Diodes Grown on InGaN/GaN Pre-Well Structure
حسب: Xiaoyu Zhao, وآخرون
منشور في: (2021-11-01)

Influence of backlighting on current-voltage characteristics of InGaN / GaN-based structures with back-shift
حسب: Vostretsov, Dmitry Y., وآخرون
منشور في: (2021-11-01)

Progress of InGaN-Based Red Micro-Light Emitting Diodes
حسب: Panpan Li, وآخرون
منشور في: (2022-04-01)

Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode
حسب: Haitao Zhang, وآخرون
منشور في: (2021-10-01)

Achieving Uniform Carrier Distribution in MBE-Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs
حسب: Pawan Mishra, وآخرون
منشور في: (2015-01-01)

On the Importance of the Polarity for GaN/InGaN Last Quantum Barriers in III-Nitride-Based Light-Emitting Diodes
حسب: Zi-Hui Zhang, وآخرون
منشور في: (2016-01-01)

Optical Properties of InGaN/GaN QW with the Same Well-Plus-Barrier Thickness
حسب: Huan Xu, وآخرون
منشور في: (2022-01-01)

Influence of electron irradiation with E = 2 MeV on electrophysical and optical characteristics of green InGaN/GaN LEDs
حسب: T. I. Mosiuk, وآخرون
منشور في: (2023-03-01)

Suspended p–n Junction InGaN/GaN Multiple-Quantum-Well Device With Selectable Functionality
حسب: Xin Li, وآخرون
منشور في: (2015-01-01)

Ultra-highly efficient InGaN green mini-light-emitting diodes with a peak external quantum efficiency of 65% with Al-treatment on the InGaN quantum wells
حسب: Yongbing Zhao, وآخرون
منشور في: (2025-01-01)

Investigation into the Anomalous Temperature Characteristics of InGaN Double Quantum Well Blue Laser Diodes Using Numerical Simulation
حسب: Han-Youl Ryu
منشور في: (2017-05-01)

Different Optical Behaviors Revealed by Electroluminescence and Photoluminescence of InGaN/GaN Coupled Quantum Wells
حسب: Huan Xu, وآخرون
منشور في: (2024-09-01)

Effect of neutron irradiation on characteristics of power ІnGaN/GaN light-emitting diodes
حسب: A. I. Vlasenko, وآخرون
منشور في: (2015-12-01)

Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells
حسب: Yadan Zhu, وآخرون
منشور في: (2017-05-01)

Reduction in the Photoluminescence Intensity Caused by Ultrathin GaN Quantum Barriers in InGaN/GaN Multiple Quantum Wells
حسب: Wei Liu, وآخرون
منشور في: (2022-02-01)

Efficiency Droop Improvement in InGaN/GaN Light-Emitting Diodes by Graded-Composition Multiple Quantum Wells
حسب: Li-Hong Zhu, وآخرون
منشور في: (2013-01-01)

Enhancing reliability of InGaN/GaN light-emitting diodes by controlling the etching profile of the current blocking layer
حسب: Shui-Hsiang Su, وآخرون
منشور في: (2020-01-01)

Effects of indium segregation and strain on near-infrared optical absorption in InGaN/GaN quantum wells
حسب: Haddou El Ghazi, وآخرون
منشور في: (2024-12-01)

Elastic Relaxation of Coherent InGaN/GaN Interfaces at the Microwire LED Sidewall
حسب: Jongil Kim, وآخرون
منشور في: (2025-05-01)

Study on Optical Properties of Indium-Graded Semipolar InGaN/GaN Quantum Well
حسب: Fanming Zeng, وآخرون
منشور في: (2016-01-01)

Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes With a Slanted Sidewall
حسب: Xinke Liu, وآخرون
منشور في: (2024-01-01)

Comprehensive investigation of GaN and AlN-on-GaN JBS diodes: optimizing inter-p + spacing for high-power applications
حسب: Sana Nasir, وآخرون
منشور في: (2025-06-01)

A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates
حسب: Dmytro Kundys, وآخرون
منشور في: (2016-01-01)

Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates
حسب: Tao Lin, وآخرون
منشور في: (2018-08-01)

High Bandwidth Freestanding Semipolar (11–22) InGaN/GaN Light-Emitting Diodes
حسب: Zhiheng Quan, وآخرون
منشور في: (2016-01-01)