| Summary: | Due to their high carrier mobility, thermal conductivity, and exceptional foldability, transition metal dichalcogenides (TMDs) present promising prospects in the realm of flexible semiconductor devices. Concurrently, tunneling field-effect transistors (TFETs) have garnered significant attention owing to their low energy consumption. This study investigates a TMD van der Waals heterojunction (VdWH) TFET, specifically by fabricating MoS<sub>2</sub> field-effect transistors (FETs), WSe<sub>2</sub> FETs, and MoS<sub>2</sub>/WSe<sub>2</sub> VdWH TFETs. The N-type characteristics of the MoS<sub>2</sub> and P-type characteristics of WSe<sub>2</sub> are established through an analysis of the electrical characteristics of the respective FETs. Finally, we analyze the energy band and electrical characteristics of the MoS<sub>2</sub>/WSe<sub>2</sub> VdWH TFET, which exhibits a drain current switching ratio of 10<sup>5</sup>. This study provides valuable insights for the development of novel low-power devices.
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