A TaOx/TiOy Bilayer Memristor with Enhanced Synaptic Features for Neuromorphic Computing
Abstract Memristors are a candidate device for artificial neural systems due to their excellent conductance‐regulation ability and potential to simulate the characteristics of biological synapses. This study fabricated a Pt/TaOx/TiOy/Ti analog artificial synapse memristor that exhibits excellent mul...
| Published in: | Advanced Electronic Materials |
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| Main Authors: | , , , , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2024-08-01
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| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400008 |
| _version_ | 1850305058253570048 |
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| author | Mingmin Zhu Zhendi Yu Gao Hu Kai Yu Yulong Jiang Jiawei Wang Wenjing Dong Jinming Guo Yang Qiu Guoliang Yu Hao‐Miao Zhou |
| author_facet | Mingmin Zhu Zhendi Yu Gao Hu Kai Yu Yulong Jiang Jiawei Wang Wenjing Dong Jinming Guo Yang Qiu Guoliang Yu Hao‐Miao Zhou |
| author_sort | Mingmin Zhu |
| collection | DOAJ |
| container_title | Advanced Electronic Materials |
| description | Abstract Memristors are a candidate device for artificial neural systems due to their excellent conductance‐regulation ability and potential to simulate the characteristics of biological synapses. This study fabricated a Pt/TaOx/TiOy/Ti analog artificial synapse memristor that exhibits excellent multilevel storage property with a large on/off ratio of ≈660 times. The dynamic resistive switching mechanism is well expounded and validated by the reset stopping voltage dependent Schottky fitting results. Moreover, the essential biological synaptic characteristics such as long‐term potentiation/depression (LTP/D) and paired‐pulse facilitation (PPF) are successfully mimicked with a low pulse energy consumption of 12.69 nJ. A neuromorphic network constructed on the enhanced symmetry and linearity of conductance for this Pt/TaOx/TiOy/Ti memristive device can achieve 92.45% accuracy in recognizing handwritten pattern. These results demonstrate a significant potential for application Pt/TaOx/TiOy/Ti memristor in non‐volatile memory and bioinspired neuromorphic systems. |
| format | Article |
| id | doaj-art-e8a4e3d3280b40e9b6fea3f5e4eaf4cc |
| institution | Directory of Open Access Journals |
| issn | 2199-160X |
| language | English |
| publishDate | 2024-08-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| spelling | doaj-art-e8a4e3d3280b40e9b6fea3f5e4eaf4cc2025-08-19T23:29:33ZengWiley-VCHAdvanced Electronic Materials2199-160X2024-08-01108n/an/a10.1002/aelm.202400008A TaOx/TiOy Bilayer Memristor with Enhanced Synaptic Features for Neuromorphic ComputingMingmin Zhu0Zhendi Yu1Gao Hu2Kai Yu3Yulong Jiang4Jiawei Wang5Wenjing Dong6Jinming Guo7Yang Qiu8Guoliang Yu9Hao‐Miao Zhou10Key Laboratory of Electromagnetic Wave Information Technology and Metrology of Zhejiang Province, College of Information Engineering China Jiliang University Hangzhou 310018 ChinaKey Laboratory of Electromagnetic Wave Information Technology and Metrology of Zhejiang Province, College of Information Engineering China Jiliang University Hangzhou 310018 ChinaHubei Yangtze Memory Laboratories Wuhan 430205 ChinaKey Laboratory of Electromagnetic Wave Information Technology and Metrology of Zhejiang Province, College of Information Engineering China Jiliang University Hangzhou 310018 ChinaMinistry of Education Key Laboratory of Green Preparation and Application for Functional Materials, School of Materials Science and Engineering Hubei University Wuhan 430062 ChinaKey Laboratory of Electromagnetic Wave Information Technology and Metrology of Zhejiang Province, College of Information Engineering China Jiliang University Hangzhou 310018 ChinaHubei Yangtze Memory Laboratories Wuhan 430205 ChinaMinistry of Education Key Laboratory of Green Preparation and Application for Functional Materials, School of Materials Science and Engineering Hubei University Wuhan 430062 ChinaKey Laboratory of Electromagnetic Wave Information Technology and Metrology of Zhejiang Province, College of Information Engineering China Jiliang University Hangzhou 310018 ChinaKey Laboratory of Electromagnetic Wave Information Technology and Metrology of Zhejiang Province, College of Information Engineering China Jiliang University Hangzhou 310018 ChinaKey Laboratory of Electromagnetic Wave Information Technology and Metrology of Zhejiang Province, College of Information Engineering China Jiliang University Hangzhou 310018 ChinaAbstract Memristors are a candidate device for artificial neural systems due to their excellent conductance‐regulation ability and potential to simulate the characteristics of biological synapses. This study fabricated a Pt/TaOx/TiOy/Ti analog artificial synapse memristor that exhibits excellent multilevel storage property with a large on/off ratio of ≈660 times. The dynamic resistive switching mechanism is well expounded and validated by the reset stopping voltage dependent Schottky fitting results. Moreover, the essential biological synaptic characteristics such as long‐term potentiation/depression (LTP/D) and paired‐pulse facilitation (PPF) are successfully mimicked with a low pulse energy consumption of 12.69 nJ. A neuromorphic network constructed on the enhanced symmetry and linearity of conductance for this Pt/TaOx/TiOy/Ti memristive device can achieve 92.45% accuracy in recognizing handwritten pattern. These results demonstrate a significant potential for application Pt/TaOx/TiOy/Ti memristor in non‐volatile memory and bioinspired neuromorphic systems.https://doi.org/10.1002/aelm.202400008Memristorneuromorphic computingresistive switchingsynaptic plasticityTaOx/TiOy bilayer |
| spellingShingle | Mingmin Zhu Zhendi Yu Gao Hu Kai Yu Yulong Jiang Jiawei Wang Wenjing Dong Jinming Guo Yang Qiu Guoliang Yu Hao‐Miao Zhou A TaOx/TiOy Bilayer Memristor with Enhanced Synaptic Features for Neuromorphic Computing Memristor neuromorphic computing resistive switching synaptic plasticity TaOx/TiOy bilayer |
| title | A TaOx/TiOy Bilayer Memristor with Enhanced Synaptic Features for Neuromorphic Computing |
| title_full | A TaOx/TiOy Bilayer Memristor with Enhanced Synaptic Features for Neuromorphic Computing |
| title_fullStr | A TaOx/TiOy Bilayer Memristor with Enhanced Synaptic Features for Neuromorphic Computing |
| title_full_unstemmed | A TaOx/TiOy Bilayer Memristor with Enhanced Synaptic Features for Neuromorphic Computing |
| title_short | A TaOx/TiOy Bilayer Memristor with Enhanced Synaptic Features for Neuromorphic Computing |
| title_sort | taox tioy bilayer memristor with enhanced synaptic features for neuromorphic computing |
| topic | Memristor neuromorphic computing resistive switching synaptic plasticity TaOx/TiOy bilayer |
| url | https://doi.org/10.1002/aelm.202400008 |
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